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| Ordering number : ENN7500 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Features * * * Package Dimensions unit : mm 2063A [2SJ650] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings --60 20 --12 --48 2.0 20 150 --55 to +150 Unit V V A A W W C C 2.55 2.55 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--6A Ratings min --60 --1 10 -1.2 7 10 --2.6 typ max Unit V A A V S Marking : J650 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51903 TS IM TA-100560 No.7500-1/4 2SJ650 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain"Miller"Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--6A, VGS=--10V ID=--6A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--30V, VGS=-10V, ID=--12A VDS=--30V, VGS=-10V, ID=--12A VDS=--30V, VGS=-10V, ID=--12A IS=--12A, VGS=0 Ratings min typ 100 145 1020 110 76 10 145 85 96 21 3.8 4.5 --0.9 --1.2 max 135 205 Unit m m pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --10V VIN ID= --6A RL=5 VDD= --30V D PW=10s D.C.1% VOUT G 2SJ650 P.G 50 S --25 ID -- VDS Tc=25C 0V --1 --25 ID -- VGS VDS= --10V --25 C 25 C --0.5 --1.0 --1.5 --2.0 --20 --8 V Drain Current, ID -- A --20 Drain Current, ID -- A --4V --10 --10 VGS= --3V 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 0 C 75 C Tc =-25 C --5 --5 25 --2.5 --3.0 --3.5 Tc= --15 --15 --4.0 --4.5 75 --5.0 IT06158 V --6 Drain-to-Source Voltage, VDS -- V IT06157 Gate-to-Source Voltage, VGS -- V No.7500-2/4 C 2SJ650 300 RDS(on) -- VGS ID= --6A 300 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 200 200 150 75C 25C 150 --6A I D= , --4V S= VG 0V = --1 , VGS -6A I D= 100 Tc= --25C 100 50 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V --2.5 IT06159 100 Case Temperature, Tc -- C VGS(off) -- Tc yfs -- ID IT06160 --2.0 Forward Transfer Admittance, yfs -- S VDS= --10V ID= --1mA Cutoff Voltage, VGS(off) -- V 7 5 3 2 10 7 5 3 2 1.0 7 5 3 --0.1 2 3 5 7 --1.0 2 3 5 VDS= --10V --1.5 --1.0 C 25 C --25 Tc= 75C --0.5 0 --50 --25 0 25 50 75 100 125 150 Case Temperature, Tc -- C --100 7 5 3 2 7 --10 2 3 IT06169 1000 7 5 IF -- VSD VGS=0 Switching Time, SW Time -- ns Drain Current, ID -- A IT06161 SW Time -- ID VDD= --30V VGS= --10V Forward Current, IF -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.3 --0.6 --0.9 --1.2 --1.5 IT06162 3 2 100 7 5 3 2 10 7 5 --0.1 td(off) tf 75 C 25C --25C tr Tc= td(on) --0.01 2 3 5 7 --1.0 2 3 5 7 --10 5 3 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V Diode Forward Voltage, VSD -- V Drain Current, ID -- A --10 --9 IT06163 VGS -- Qg 2 VDS= --30V ID= --12A Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 10 0 --5 --10 Ciss --8 --7 --6 --5 --4 --3 --2 --1 0 Coss Crss --15 --20 --25 --30 IT06164 0 5 10 15 20 25 IT06165 Drain-to-Source Voltage, VDS -- V Total Gate Charge, Qg -- nC No.7500-3/4 2SJ650 --100 7 5 3 2 ASO 10 s 2.5 PD -- Ta Allowable Power Dissipation, PD -- W 5 7 --100 IT06166 IDP= --48A <10s 10 1m 0s s 2.0 Drain Current, ID -- A ID= --12A --10 7 5 3 2 --1.0 7 5 3 2 10 DC Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 --1.0 2 3 10 m s 0m s tio n 1.5 op era 1.0 0.5 --0.1 --0.1 0 5 7 --10 2 3 0 20 40 60 80 100 120 140 160 Drain-to-Source Voltage, VDS -- V 25 Ambient Tamperature, Ta -- C IT06167 PD -- Tc Allowable Power Dissipation, PD -- W 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT06168 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2003. Specifications and information herein are subject to change without notice. PS No.7500-4/4 |
Price & Availability of 2SJ650
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