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| BLV99 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: * Gold Metallization * Emitter Ballasting * High Gain PACKAGE STYLE 205 4L STUD MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 300 mA 45 V 25 V 3.5 V 5.3 W @ TC = 25 C -65 C to +200 C -65 Cto +150 C 33 C/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE COB PG IMD1 IC = 1.0mA IC = 10 mA TC = 25 C TEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 UNITS V V V mA --- IE = 1.0 mA VEB = 5.0 V VCE = 5 V VCB = 24 V VCE = 20 V VCE = 20 V Pout = 0.5 W IC = 150 mA IC = 150 mA IC = 100 mA f = 1.0 MHz f = 860 MHz f = 860 MHz 20 3.5 12 -58 pF dB dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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