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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
2PD1820A NPN general purpose transistor
Product specification Supersedes data of 1997 May 22 1999 Apr 12
Philips Semiconductors
Product specification
NPN general purpose transistor
FEATURES * High current (max. 500 mA) * Low voltage (max. 50 V) * Low collector-emitter saturation voltage (max. 600 mV). APPLICATIONS * General purpose switching and amplification, especially for portable equipment. DESCRIPTION NPN transistor in an SC-70; SOT323 plastic package. PNP complement: 2PB1219A.
handbook, halfpage
2PD1820A
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1
MARKING
2
TYPE NUMBER 2PD1820AQ 2PD1820AR 2PD1820AS Note 1. = - : Made in Hong Kong. = t : Made in Malaysia.
MARKING CODE(1) AQ AR AS Fig.1 Simplified outline (SC-70; SOT323) and symbol.
1 Top view 2
MAM336
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 open base open collector CONDITIONS open emitter MIN. - - - - - - - -65 - -65 MAX. 60 50 5 500 1 200 200 +150 150 +150 UNIT V V V mA A mA mW C C C
1999 Apr 12
2
Philips Semiconductors
Product specification
NPN general purpose transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain 2PD1820AQ 2PD1820AR 2PD1820AS hFE VCEsat Cc fT Note 1. Pulse test: tp 300 s; 0.02. DC current gain collector-emitter saturation voltage collector capacitance transition frequency IC = 500 mA; VCE = 10 V; note 1 IC = 300 mA; IB = 30 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 C IC = 0; VEB = 4 V IC = 150 mA; VCE = 10 V; note 1 85 120 170 40 - - - - - MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
2PD1820A
VALUE 625
UNIT K/W
MAX. 10 5 10 170 240 340 - 600 15 -
UNIT nA A nA
mV pF MHz
IC = 50 mA; VCE = 10 V; f = 100 MHz; 150 note 1
1999 Apr 12
3
Philips Semiconductors
Product specification
NPN general purpose transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
2PD1820A
SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 12
4
Philips Semiconductors
Product specification
NPN general purpose transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
2PD1820A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 12
5
Philips Semiconductors
Product specification
NPN general purpose transistor
NOTES
2PD1820A
1999 Apr 12
6
Philips Semiconductors
Product specification
NPN general purpose transistor
NOTES
2PD1820A
1999 Apr 12
7
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 Apr 12
Document order number:
9397 750 05588

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