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| 3.4 V, 1.2 W RF Power Amplifier IC V 1.0 MA02107AF Features Ideal for Pager Applications +30.8 dBm Output Power 30.8 dB Power Gain Single Positive Supply Class AB Bias 50 Ohm Input Impedance Single Capacitor Output Match Functional Schematic VDD1 N/C GND GND RF IN GND GND N/C V DD2 GND GND GND RF OUT/VDD3 GND GND N/C Description The MA02107AF is a three stage power amplifier, designed for paging applications to have an output power of +30.8 dBm with an input power of 0 dBm. This power amplifier operates at +3.4 volts with 55% typical power added efficiency. The MA02107AF is mounted in a standard outline 16-pin TSSOP plastic package. The MA02107AF is fabricated using M/A-COM's self-aligned MSAG (R)-Lite MESFET process for a low single supply voltage, high power efficiency, and excellent reliability. Pin Configuration Pin 1 2 3 4 5 6 7 8 Function VDD1 N/C GND GND RFIN GND GND N/C N/C GND GND RFOUT /VDD3 GND GND GND VDD2 Description First Stage Supply Voltage Not Connected Ground Ground RF Input Ground Ground Not Connected Not Connected Ground Ground RF Output/Third Stage Supply Ground Ground Ground Second Stage Supply Voltage Ordering Information Part Number MA02107AF-R7 MA02107AF-R13 MA02107AF-SMB Description 7 inch, 1000 piece reel 13 inch, 3000 piece reel Sample Test Board 9 10 11 12 13 14 15 16 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 1 Part Description Power Amplifier IC 3.4 V, 1.2 W RF Electrical Specifications: T S = 35 C , Z0 = 50 1 2,3 MA02107AF V 1.0 Parameter Frequency Output Power Power Gain Power Added Efficiency Input Return Loss 2nd Harmonics 3rd Harmonics Thermal Resistance Stability Test Conditions Units MHz dBm dB % dB dBc dBc o C/W Min 900 30.0 45 10 Typ 30.8 30.8 55 15 -35 -50 41 Max 942 -29 -45 3rd Stage FET to solder point of pin 13 +3.0 V < VCC < +5.0 V, POUT < +31 dBm, VSWR < 5:1, -40C < TC < +85C, RBW = 3 MHz max hold All spurs < -60 dBc 1. Ts is the temperature measured at the soldering point of pin 13. 2. Unless otherwise specified, input power is 0 dBm, VDD is +3.45 V, and test frequency is 900 MHz. 3. The output is externally matched to 50 ohms. Absolute Maximum Ratings1 Parameter Max Input Power Operating Voltages Operating Temperature, Ts Channel Temperature Storage Temperature Absolute Maximum +6 dBm +5.0 volts -40 C to +70 C +150 C -40 C to +150 C 1. Exceeding any one or combination of these limits may cause permanent damage. Application Information Static Sensitivity Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling these devices. Board Layout Sample Test Board 50 Ohm Lead Transition Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2 Part Description Power Amplifier IC 3.4 V, 1.2 W RF Output Match Impedance (as seen from pin 12) 170 MA02107AF V 1.0 0.2 180 0 0.5 -170 -160 925 MHz 900 MHz 8.4 - j9.2 850 MHz 0 -15 40 -1 1 Typical Performance Curves Output Power and PAE vs. Input Power 40 35 POUT, Output Power (dBm) 50 Pwr Added Efficiency (%) 50 40 60 30 POUT 25 POUT (dBm) and 20 = 901 MHz V DD = 3.4 V 15 10 -10 -5 0 PIN, Input Power (dBm) Output Power and PAE vs. Supply Voltage 35 30 P OUT , Output Power (dBm) 25 POUT 20 15 10 5 0 0.0 = 901 MHz PIN = 0 dBm 40 30 20 10 0 0.5 1.0 1.5 2.0 2.5 3.0 VDD, Supply Voltage (Volts) 3.5 4.0 70 60 , Pwr Added Efficiency (%) 50 POUT, Output Power (dBm) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. -80 -90 -100 -110 -12 0 -1 30 Output Power, PAE, and VSWR vs. Fequency 60 3:1 40 30 30 POUT 20 2:1 20 10 10 VSWR 0 5 0 800 850 900 , Frequency (MHz) 950 1:1 1000 Harmonics 40 30 20 10 0 -10 -20 -30 -40 2 3 Frequency 4 5 = 901 MHz PIN = 0 dBm V DD = 3.4 V 3 Part Description Power Amplifier IC 3.4 V, 1.2 W RF Application Schematic +VDD (+3.4V) C1 1 MA02107AF V 1.0 C2 16 15 14 13 12 11 10 9 L1 N/C 2 3 RF INPUT C3 4 5 6 7 RF OUTPUT T1 C5 C4 N/C N/C 8 List of components: C1 = 0.1F Kemet multilayer ceramic chip capacitor (C1206C104K5RAC) C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC) C4 = 6.8 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL) C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL) L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB) T1 = 0.19" of 50 ohm grounded coplanar waveguide (60 mil GETEK board) TSSOP-16 Package Dimensions in millimeters SYMBOL A A1 A2 b C D E E1 e L L1 y MIN 1.05 0.05 -- 0.20 -- 4.90 6.20 4.30 -- 0.50 0.90 -- 0 NOM 1.10 0.10 1.00 0.25 0.127 5.075 6.40 4.40 0.65 0.60 1.00 -- 4 MAX 1.20 0.15 1.05 0.28 -- 5.10 6.60 4.50 -- 0.70 1.10 0.10 8 Dimensions in inches MIN 0.041 0.002 -- 0.008 -- 0.193 0.244 0.169 -- 0.020 0.035 -- 0 NOM 0.043 0.004 0.039 0.010 0.005 0.200 0.252 0.173 0.025 0.024 0.039 -- 4 MAX 0.047 0.006 0.041 0.011 -- 0.201 0.260 0.177 -- 0.028 0.043 0.004 8 NOTES: 1. 2. 3. 4. 5. 6. Controlling dimension: mm Lead frame material: EFTEC 64 Dimension "D" does not include mold flash, protrusions or gate burrs Dimension "E" does not include interlead flash or protrusions Tolerance: 0.254 mm (0.010) unless otherwise specified End flash max: 0.12 mm (0.005 ) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 4 |
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