 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP4959GM Pb Free Plating Product Advanced Power Electronics Corp. Lower Turn-on Voltage Simple Drive Requirement Dual P MOSFET Package SO-8 S1 S2 G1 D1 D1 D2 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 -16V 65m -4.7A ID Description TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -16 8 -4.7 -3.8 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200218051 AP4959GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -16 -0.3 - Typ. -0.01 10 13 2 4 11 19 38 22 920 175 150 Max. Units 65 75 100 -1.0 -1 -25 100 20 1780 V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-3A VGS=-1.8V, ID=-1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VDS=-16V, VGS=0V VDS=-12V, VGS=0V VGS=8V ID=-4A VDS=-12V VGS=-4.5V VDS=-10V ID=-1A RG=3.3,VGS=-5V RD=10 VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-1.7A, VGS=0V Min. - Typ. - Max. Units -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on min. copper pad. AP4959GM 15 15 T A = 25 o C 12 -ID , Drain Current (A) -ID , Drain Current (A) -5.0V -4.5V -3.5V -1.8V T A = 150 C 12 o -5.0V -4.5V -3.5V 9 9 -1.8V 6 6 3 3 V G = - 1. 0 V 0 0 1 2 3 4 0 V G = - 1. 0 V 0 1 2 3 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 330 1.6 270 I D = -1 A Normalized R DS(ON) T A =25 C o 1.4 I D =-4A V G =-4.5V RDS(ON) (m ) 210 1.2 150 1.0 90 0.8 30 0 1 2 3 4 5 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 5 4 3 -IS(A) T j =150 o C 2 T j =25 o C Normalized -VGS(th) (V) 1.2 1.4 1.5 1.0 0.5 1 0 0.0 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4959GM f=1.0MHz 14 10000 12 -VGS , Gate to Source Voltage (V) I D = -4 A V DS = - 1 2 V 10 8 C (pF) 1000 6 C iss 4 2 0 0 10 20 30 40 100 C oss C rss Q G , Total Gate Charge (nC) 1 -V DS , Drain-to-Source Voltage (V) 5 9 13 17 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 1ms 10ms 0.1 0.1 0.05 -ID (A) 1 0.02 0.01 100ms 1s 0.1 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W T A =25 o C Single Pulse DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 12 VG V DS =-5V -ID , Drain Current (A) 9 QG -4.5V T j =25 C o T j =150 C o 6 QGS QGD 3 Charge 0 Q 0 0.5 1 1.5 2 2.5 3 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform |
Price & Availability of AP4959GM
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |