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| Intelligent Power Devices (IPDs) MIP501, MIP502 MIP501, MIP502 Silicon MOS IC s Features q MIP501 10.80.2 3.80.2 7.50.2 4.50.2 Unit : mm High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5) Over-current-protection function built-in Reset function built-in 16.01.0 90 0.650.1 0.850.1 q q q 2.50.1 1.00.1 0.8C 0.650.1 0.70.1 0.8C Direct drive possible by the logic circuit s Applications q Lamp drive 2.50.2 0.8C 0.50.1 2.50.2 0.40.1 2.050.2 s Absolute Maximum Ratings (Ta= 25C) Parameter Output breakdown voltage Output peak current Output current Input voltage Input current Allowable power dissipation Junction temperature Storage temperature Operating temperature MIP501 MIP502 Symbol VDSS IOP IOA VIN IIN PD Tj Tstg Topr Rating 40 5 1.7 - 0.5 to 6 10 1.5 1* 150 - 55 to +150 - 40 to + 85 Unit V A V mA W C C C A 1 2 3 1 : IN 2 : Drain 3 : Source MT3 Type Package 4.00.2 MIP502 5.00.2 Unit : mm 0.45 -0.1 1.27 1.27 +0.15 13.50.5 0.70.1 0.70.2 8.00.2 0.45 -0.1 +0.15 * The value at mounted on PCB (glass epoxy resin: 100 x100mm). (For MIP502 only) 123 2.540.15 2.30.2 1 : Source 2 : Drain 3 : IN TO-92NL Type Package s Block Diagram 2 DRAIN Over voltage protection circuit 3 IN Reset circuit Over current protection circuit 1 SOURCE Intelligent Power Devices (IPDs) MIP501, MIP502 s Pin Descriptions No.1 pin : GND pin. Connect to the GND pin. (Source) No.2 pin : Output pin. Connect to the load. The current flowing into this terminal is limited at about 5A. When this terminal voltage exceeds about 4.6V, the output MOS FET is turned OFF. (Drain) No.3 pin : Input pin. The signal from the logic is inputted to drive the device. When this is open, the output MOS FET turns OFF. s Electrical Characteristics (Ta= 25C) Parameter Drain-Source ON-resistance Drain voltage Drain breakdown voltage Drain leakage current (1) Drain leakage current (2) Input voltage Over-current protection Reset voltage Input current Symbol RDS (ON) VDS (ON) VDSS IDSS (1) IDSS (2) VIN (H) VIN (L) IOCP VRESET IIN (opr) VIN = 5V VIN = 5V VIN = 5V, VDS =1V 5.0 4.6 1.0 Condition VIN = 5V, IO=1.5A VIN = 5V, IO=1.5A IDSS = 3mA VDSS = 40V VDSS = 25V 4.5 5.0 40 3.0 1.5 6.0 0.8 Min Typ Max 0.5 0.75 Unit V V mA mA V V A V mA Intelligent Power Devices (IPDs) MIP501, MIP502 VDSS - Ta SS 100 Output breakdown voltage VDSS (V) Output leakage current IDSS (mA) 5 80 MIP502 4 IDSS - Ta SS 60 MIP501 40 3 2 20 1 0 -50 0 50 Ambient temperature Ta (C) 100 0 -50 0 50 Ambient temperature Ta (C) 100 Is - Ta Detected value at over current Is (C) 10 IIN -VIN 100 8 6 VDS=3V 4 VDS=2V Input current IIN (A) 50 2 0 -50 0 50 Ambient temperature Ta (C) 100 0 4 5 Input voltage VIN (V) 6 Ron - Ta 2.0 0.6 ON-resistance Ron () Allowable drain loss PD (W) 1.8 1.6 1.4 1.2 1.0 PD - Ta 0.4 0.2 MIP501 0.8 0.6 0.4 0.2 0 0 40 80 120 160 MIP502 0 -50 0 50 Ambient temperature Ta (C) 100 IIN - Ta N 100 80 Ambient temperature Ta (C) Input current IIN (A) 60 40 20 0 -50 0 50 Ambient temperature Ta (C) 100 |
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