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| SHINDENGEN Schottky Rectifiers (SBD) Single D1FM3 30V 5A OUTLINE DIMENSIONS RATINGS Absolute Maximum Ratings (Tc=25) Item Symbol Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load IO Peak Surge Forward Current Conditions IFSM Tc=25 Symbol VF1 VF2 IR Cj AEjc AEjl AEja Ta=25 On glass-epoxy substrate 50Hz sine wave, R-load Tc=83 50Hz sine wave, Non-repetitive 1 cycle peak value, Tc=25 Ratings -55150 150 30 3.0 5.0 90 Ratings Max.0.40 Max.0.46 Max.0.1 Typ.130 Max.16 Max.18 Max.65 Unit V A A Unit V mA pF /W Electrical Characteristics Item Forward Voltage Reverse Current Junction Capacitance Thermal Resistance Conditions IF=1.0A, Pulse measurement IF=3.0A, Pulse measurement VR=VRM, Pulse measurement f=1MHz, VR=10V junction to case junction to lead junction to ambient On glass-epoxy substrate Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D1FM3 10 Forward Voltage 5 Forward Current IF [A] 2 Tc=150C [MAX] Tc=150C [TYP] Tc= 25C [MAX] Tc= 25C [TYP] 1 0.5 0.2 Pulse measurement per diode 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Forward Voltage VF [V] D1FM3 2.5 Forward Power Dissipation Forward Power Dissipation PF [W] 2 SIN 0.5 D=0.8 0.3 DC 1.5 0.1 0.05 1 0.2 0.5 0 0 1 2 3 4 5 Average Rectified Forward Current IO [A] Tj = 150C 0 tp D=tp/T T IO D1FM3 120 Peak Surge Forward Capability IFSM 10ms 10ms 100 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 80 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycle] D1FM3 100 Reverse Current Tc=150C [TYP] Tc=125C [TYP] 10 Tc=100C [TYP] Reverse Current IR [mA] 1 Tc=75C [TYP] Tc=50C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] D1FM3 Reverse Power Dissipation 4 3.5 3 2.5 2 0.5 1.5 1 0.5 0 DC D=0.05 0.1 0.2 0.3 Reverse Power Dissipation PR [W] SIN 0.8 0 5 10 15 20 25 30 35 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp/T T D1FM3 1000 Junction Capacitance f=1MHz Tl=25C TYP 500 Cj [pF] 200 Junction Capacitance 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 30 Reverse Voltage VR [V] D1FM3 10 Derating Curve Average Rectified Forward Current IO [A] 8 DC D=0.8 6 0.5 SIN 0.3 4 0.2 0.1 2 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 15V 0 0 IO VR tp D=tp/T T D1FM3 6 Derating Curve Average Rectified Forward Current IO [A] 5 DC D=0.8 Glass-epoxy substrate Conductor layer 35um 4 0.5 3 SIN 0.3 2 0.2 0.1 1 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 15V 0 0 IO VR tp D=tp/T T D1FM3 10 Derating Curve Average Rectified Forward Current IO [A] 8 DC D=0.8 6 0.5 SIN 0.3 4 0.2 0.1 2 0.05 0 0 20 40 60 80 100 120 140 160 Lead Temperature Tl [C] VR = 15V 0 0 IO VR tp D=tp/T T D1FM3 100 Transient Thermal Impedance AEja Transient Thermal Impedance AEjc,AEjl,AEja [C/W] AEjl AEjc 10 1 0.1 10-4 10-3 10-2 10-1 100 101 102 103 Time t [s] D1FM3 ja - Conductor pattern area 140 120 ja [C/W] 100 80 60 40 20 0 1 10 100 1000 Conductor pattern area [mm2] |
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