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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBT6428; PMBT6429 NPN general purpose transistors
Product specification Supersedes data of 1997 Apr 02 1999 Apr 27
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES * Low current (max. 100 mA) * Low voltage (max. 50 V). APPLICATIONS * General purpose switching and amplification * Telephony and professional communication equipment. DESCRIPTION NPN transistor in a SOT23 plastic package.
handbook, halfpage
PMBT6428; PMBT6429
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1
MARKING TYPE NUMBER PMBT6428 PMBT6429 Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. Fig.1 Simplified outline SOT23 and symbol. MARKING CODE(1) 1K 1L
Top view
1
2
MAM255
2
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMBT6428 PMBT6429 VCEO collector-emitter voltage PMBT6428 PMBT6429 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 open collector open base - - - - - - - -65 - -65 50 45 6 100 200 200 250 +150 150 +150 V V V mA mA mA mW C C C CONDITIONS open emitter - - 60 55 V V MIN. MAX. UNIT
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain PMBT6428 PMBT6429 DC current gain PMBT6428 PMBT6429 DC current gain PMBT6428 PMBT6429 VCEsat VBE Cc Ce fT collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA base-emitter voltage collector capacitance emitter capacitance transition frequency IC = 1 mA; VCE = 5 V IC = 10 mA; VCE = 5 V IC = 1 mA; VCE = 5 V CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 5 V IC = 0.1 mA; VCE = 5 V PARAMETER thermal resistance from junction to ambient
PMBT6428; PMBT6429
CONDITIONS note 1
VALUE 500
UNIT K/W
MIN. - - 250 500 250 500 250 500 - - 560 - - 100
MAX. 10 10 650 1250 - - - - 200 600 660 3 12 700
UNIT nA nA
mV mV mV pF pF MHz
IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 1 mA; VCE = 5 V; f = 100 MHz
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN general purpose transistors
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PMBT6428; PMBT6429
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 27
4
Philips Semiconductors
Product specification
NPN general purpose transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PMBT6428; PMBT6429
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 27
5
Philips Semiconductors
Product specification
NPN general purpose transistors
NOTES
PMBT6428; PMBT6429
1999 Apr 27
6
Philips Semiconductors
Product specification
NPN general purpose transistors
NOTES
PMBT6428; PMBT6429
1999 Apr 27
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 27
Document order number:
9397 750 05815

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