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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4
H9926TS / H9926CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment
8 7 6 5
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
Q2 Q1
1
2
3
4
Pin 1: Drain 1 Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain 2
Features
* RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=30m@VGS=4.5V, ID=6A * High Density Cell Design for Ultra Low On-Resistance * High Power and Current Handing Capability * Fully Characterized Avalanche Voltage and Current * Ideal for Li ion Battery Pack Applications
H9926CTS Symbol & Pin Assignment
8 7 6 5
Q2 Q1
1
2
3
4
Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain
Applications
* Battery Protection * Load Switch * Power Management
Absolute Maximum Ratings (T =25 C, unless otherwise noted)
o A
Symbol VDS VGS ID IDM PD Tj, Tstg RJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed)
*1
Parameter
Ratings 20 12 6 30
Units V V A A W W C C/W
Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75oC Operating and Storage Temperature Range Thermal Resistance Junction to Ambient
*2
o
1.5 0.96 -55 to +150 83
*1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board
H9926TS, H9926CTS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25C, unless otherwise noted)
Symbol * Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS * Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=10V, ID=1A, VGS=4.5V RGEN=6 VDS=8V, VGS=0V, f=1MHz VDS=10V, ID=6A, VGS=4.5V Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Transconductance VGS=0V, ID=250uA VGS=2.5V, ID=5.2A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=20V, VGS=0V VGS=12V, VDS=0V VDS=10V, ID=6A 20 0.6 7 Characteristic Test Conditions Min.
Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 2/4
Typ.
Max.
Unit
34 25 13
40 30 1.5 1 100 -
V m V uA nA S
4.86 0.92 1.4 562 106 75 8.1 9.95 21.85 5.35
ns pF nC
* Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A 1.7 1.2 A V
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Switching Test Circuit
VDD td(on)
ton tr
Switching Waveforms
td(off)
toff tf 90%
90% RD VIN VGEN RG G S Input, VIN 10% Pulse Width 50% 50% 90% D VOUT Output, VOUT 10% 10%
Inverted
H9926TS, H9926CTS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TSSOP-8L Dimension
D
Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 3/4
H9926TS Marking:
Pb-Free: " . " (Note) Normal: None
Pb Free Mark Control Code Data Code Pin 1 Index
8
7
6
5
E1
Pin1 index 2 3 4
E
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
DIM A A1 b C D E E1 e L S
Min. Max. 1.20 0.05 0.15 0.19 0.3 0.09 0.20 2.90 3.10 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0o 8o
*: Typical, Unit: mm
H9926CTS Marking:
Pb-Free: " . " (Note) Normal: None
Detail F
A1 b
R 0.15 C
Seating Plane
Control Code Data Code Pin 1 Index
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
A
e
S L
0.25
Detail F
Note: Green label is used for pb-free packing Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
8-Lead TSSOP-8L Plastic Surface Mounted Package HSMC Package Code: TS
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
H9926TS, H9926CTS
H 9 9 2 6 CT S
Pb Free Mark
H9 9 2 6 TS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 4/4
Critical Zone TL to TP
Tsmin tS Preheat
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3oC/sec
Pb-Free Assembly <3oC/sec
100oC 150oC 60~120 sec
150oC 200oC 60~180 sec
<3oC/sec
<3oC/sec
183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes
o o
217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes
Peak temperature 245oC 5oC 260 C +0/-5 C
o o
Dipping time 5sec 1sec 5sec 1sec
H9926TS, H9926CTS
HSMC Product Specification

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