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TYPICAL PERFORMANCE CURVES (R)
APT100GN60LDQ4 APT100GN60LDQ4G*
APT100GN60LDQ4(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
TO-264
* * * *
* 600V Field Stop
Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current
1 8 8
All Ratings: TC = 25C unless otherwise specified.
APT100GN60LDQ4(G) UNIT Volts
600 30
@ TC = 25C @ TC = 110C
229 135 300 300A @ 600V 625 -55 to 175 300
Watts C Amps
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
600 5.0 1.05 5.8 1.45 1.87 50
2
6.5 1.85
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES RG(int)
Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
600 2
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7622
Rev A
10-2005
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C)
A
TBD
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT100GN60LDQ4(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 100A TJ = 175C, R G = 4.3
7,
MIN
TYP
MAX
UNIT pF V nC
6000 560 200 9.5 600 45 340
VGE =
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V VCC = 600V, VGE = 15V, TJ = 125C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 100A
300 6 31 65 310 55 4750 5095 2675 31 65 350 85 5000 6255 3300
A
s
ns
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 100A
ns
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 1.0 7
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.21 .33 6.1
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
10-2005 Rev A 050-7622
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package pin temperature to 100A.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
300 250
V
GE
= 15V
350 300 250 200 150 100 50 0
APT100GN60LDQ4(G)
15V
13V
12V 11V
10V 9V 8V 7V
IC, COLLECTOR CURRENT (A)
TJ = 175C
200
TJ = 125C
150
TJ = 25C
100
TJ = -55C
50 0
300 250 200 150 100
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 100A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
TJ = -55C TJ = 25C TJ = 125C
IC, COLLECTOR CURRENT (A)
VCE = 120V VCE = 300V VCE = 480V
8 6 4 2 0
50
TJ = 175C
0
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
100
200 300 400 500 GATE CHARGE (nC) FIGURE 4, Gate Charge
600
700
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0 2.5 2.0 1.5 1.0 0.5 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
3.0 2.5 2.0
IC = 200A
IC = 200A IC = 100A
IC = 100A
1.5 1.0 0.5 0
IC = 50A
IC = 50A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
300
0
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
250 200 150 100 50 0 -50 -25
Lead Temperature Limited
(NORMALIZED)
050-7622
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev A
10-2005
40 td(ON), TURN-ON DELAY TIME (ns) 35 30 25 20 15 10
VCE = 400V T = 25C, or 125C L = 100H
500 td (OFF), TURN-OFF DELAY TIME (ns) VGE = 15V
APT100GN60LDQ4(G)
400
300
VGE =15V,TJ=125C
200
VGE =15V,TJ=25C
100
5 RJ = 1.0 G 0
0
25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
0
VCE = 400V RG = 1.0 L = 100H
250
RG = 1.0, L = 100H, VCE = 400V
140 120 100 80 60 40 20
RG = 1.0, L = 100H, VCE = 400V
200 tf, FALL TIME (ns) tr, RISE TIME (ns)
TJ = 125C, VGE = 15V
150
100
50
TJ = 25 or 125C,VGE = 15V
TJ = 25C, VGE = 15V
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
0
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
0
25 EON2, TURN ON ENERGY LOSS (mJ)
EOFF, TURN OFF ENERGY LOSS (mJ)
V = 400V CE V = +15V GE R = 1.0
G
8 7 6 5 4 3 2 1 0
= 400V V CE = +15V V GE R = 1.0
G
20
TJ = 125C
TJ = 125C
15
10
5
TJ = 25C
TJ = 25C
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
0
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (mJ)
45 40 35 30 25 20 15 10 5 0
0
J
SWITCHING ENERGY LOSSES (mJ)
= 400V V CE = +15V V GE T = 125C
25
Eon2,200A
= 400V V CE = +15V V GE R = 1.0
G
Eon2,200A
20
15
10
Eoff,200A Eon2,100A Eoff,100A Eon2,50A Eoff,50A
10-2005
Eoff,200A Eoff,100A
Eon2,100A
5
Rev A
Eon2,50A Eoff,50A
050-7622
20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
0
TYPICAL PERFORMANCE CURVES
10,000 IC, COLLECTOR CURRENT (A) Cies 5,000 C, CAPACITANCE ( F)
350 300 250 200 150 100 50
APT100GN60LDQ4(G)
P
1,000 500 Coes
Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.25
ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9 0.7
0.15
0.5 0.10 0.3 0.05 0.1 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
100 FMAX, OPERATING FREQUENCY (kHz)
50
RC MODEL Junction temp. (C) 0.949 Power (watts) 0.116 Case temperature. (C) 0.244 0.00708
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
10
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 50 70 90 110 130 150 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
4 10
T = 125C J T = 75C C D = 50 % V = 400V CE R = 1.0
G
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
050-7622
Rev A
10-2005
APT100GN60LDQ4(G)
APT100DQ60
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr Collector Current 90% 5% 10% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
td(off) tf 90%
Gate Voltage
TJ = 125C
Collector Voltage 10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7622
Rev A
10-2005
TYPICAL PERFORMANCE CURVES
APT100GN60LDQ4(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 108C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 100A Forward Voltage IF = 200A IF = 100A, TJ = 125C Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.35 , THERMAL IMPEDANCE (C/W) 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 10-5 0.3 0.1 0.05 0.05 10-4
Note:
All Ratings: TC = 25C unless otherwise specified.
APT100GN60LDQ4 UNIT Amps
100 156 1000
MIN TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 1.6 2.05 1.28
MIN TYP 34 MAX UNIT ns nC
2.2
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 100A, diF/dt = -200A/s VR = 400V, TC = 25C
IF = 100A, diF/dt = -200A/s VR = 400V, TC = 125C
160 290 5 220 1530 13 100 2890 44 -
Amps ns nC Amps ns nC Amps
-
IF = 100A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
0.7
PDM
t1 t2
JC
SINGLE PULSE SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
Z
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C)
Case temperature (C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7622
0.0743
5.17
Rev A
Power (watts)
0.188
0.361
10-2005
0.0673
0.0182
300 250 IF, FORWARD CURRENT (A) 200 TJ = 175C 150 100 50 TJ = -55C 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
T =125C J V =400V
R
300
trr, REVERSE RECOVERY TIME (ns) TJ = 25C
APT100GN60LDQ4(G)
T =125C J V =400V
R
250 200 150 100 50 0
200A 100A 50A
TJ = 125C
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change
4000 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0 50A 100A 200A
60
T =125C J V =400V
50 40 30 20 10 0
R
200A
100A 50A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 180 160 140 120
Duty cycle = 0.5 T =175C
J
1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 0.2 0.0 trr IRRM Qrr
Qrr trr
IF(AV) (A)
100 80 60 40 20
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
1400 CJ, JUNCTION CAPACITANCE (pF) 1200 1000 800 600 400 200
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
Rev A
10-2005
0
1
050-7622
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT60M75L2LL
APT100GN60LDQ4(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-264(L) Package Outline
e1 SAC: Tin, Silver, Copper
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079)
19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Collector (Cathode)
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate Collector (Cathode) Emitter (Anode)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7622
Dimensions in Millimeters and (Inches)
Rev A
0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118)
10-2005

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