 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AOL1400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1400 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and good body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard product AOL1400 is Pb-free (meets ROHS & Sony 259 specifications). AOL1400L is a Green Product ordering option. AOL1400 and AOL1400L are electrically identical. Features VDS (V) = 30V ID = 85A (V GS = 10V) RDS(ON) < 4.5m (VGS = 10V) RDS(ON) < 5.5m (VGS = 4.5V) Ultra SO-8TM Top View Fits SOIC8 footprint ! Bottom tab connected to drain D D G S S G Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25C G TC=100C B ID IDM IDSM IAR C Maximum 30 12 85 70 200 17 13 30 145 100 50 2.1 1.3 -55 to 175 Units V V Pulsed Drain Current Continuous Drain TA=25C Current G TA=70C Avalanche Current C Repetitive avalanche energy L=0.3mH Power Dissipation Power Dissipation B A A mJ W W C EAR PD PDSM TJ, TSTG TC=25C TC=100C TA=25C TA=70C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C Symbol A A t 10s Steady-State Steady-State RJA RJC Typ 21 48 1 Max 25 60 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOL1400 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, I D=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, V DS=5V VGS=10V, I D=20A TJ=125C 0.6 100 1.1 3.9 5 4.6 102 0.64 Min 30 0.005 1 5 100 1.8 4.5 6 5.5 1 85 10500 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 9130 625 387 0.4 72.4 13.4 16.8 14.7 14.2 105.5 23.5 30.5 21 0.8 85 VGS=4.5V, V DS=15V, I D=20A VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 22 21 150 35 40 33 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. 62 D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. A Rev 1: Dec 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOL1400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 60 ID(A) 40 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 50 4.5V 3.0V ID(A) 2.5V VGS=2V 20 25C 40 30 125C VDS=5V 60 6.0 Normalized On-Resistance 5.5 RDS(ON) (m) 5.0 4.5 4.0 3.5 3.0 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=20A VGS=4.5 VGS=10V 12 10 8 6 4 2 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C IS (A) 125C ID=20A 1.0E+02 1.0E+01 1.0E+00 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AOL1400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 12000 Ciss 10000 8000 6000 4000 Coss 2000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss 1000 1000 TJ(Max)=175C, TA=25C 10s 100 800 TTJ(Max)=175C J(Max)=150C TT=25C AA=25C 100s ID (Amps) 10 RDS(ON) limited 1ms DC 10ms Power (W) 600 400 1 200 0.1 0.1 1 10 100 0 0.0001 0.001 0.01 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note B) 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJC=1.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOL1400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 ID(A), Peak Avalanche Current TA=25C 80 60 40 20 0 0.00001 Power Dissipation (W) 0.0001 0.001 0.01 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 100 Current rating ID(A) 80 Power (W) 60 40 20 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 100 ZJA Normalized Transient Thermal Resistance 10 1 0.1 0.01 0.001 0.00001 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD Single Pulse Ton T 100 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AOL1400L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |