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| ZXTN19055DZ 55V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 55V IC(cont) = 6A VCE(sat) < 60mV @ 1A RCE(sat) = 28m PD = 2.1W Description Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. C B Feature * * * * * * Extremely low equivalent on-resistance of 28m 6 Amps continuous current Up to 10 amps peak current Very low saturation voltages Excellent hFE characteristics up to 10 amps 150V Forward blocking voltage E E C C B Pinout - top view Applications * * * * * Emergency lighting circuits Motor driving (including DC fans) Solenoid, relay and actuator drivers DC modules Backlight inverters Ordering information Device ZXTN19055DZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 Device marking S75 Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN19055DZ Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking voltage) Collector-emitter voltage (base open) Emitter-base voltage Continuous collector current(b) Peak pulse current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C Linear derating factor Operating and storage temperature range Tj, Tstg (b) Symbol VCBO VCEX VCEO VEBO IC ICM PD Limit 150 150 55 7 6 10 1.5 12 Unit V V V V A A W mW/C W mW/C C PD 2.1 16.8 -55 to +150 Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R JA R JA Limit 83 59 Unit C/W C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN19055DZ Characteristics Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN19055DZ Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Collector-base cut-off current Collector-emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage Symbol BVCBO BVCEX BVCEO BVEBO ICBO ICEX IEBO VCE(sat) Min. 150 150 55 7 Typ. 200 200 75 8.1 <1 <1 <1 25 45 40 200 110 140 170 Base-emitter saturation voltage Base-emitter turn-on voltage VBE(sat) 800 1000 VBE(on) 760 900 Static forward current transfer hFE ratio 250 250 180 30 400 400 300 50 20 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO td tr ts tf 140 200 21.2 13.8 21.9 546 106 300 s; duty cycle 2%. Max. Unit Conditions V IC = 100mA V V V IC = 100mA, RBE < 1k -1V < VBE < +0.25V IC = 10mA (*) IE = 100mA VCB = 120V VCB = 120V, Tamb= 100C VCE = 120V; RBE < 1k -1V < VBE < 0.25V VEB = 5.6V IC = 0.5A, IB = 50mA(*) IC = 1A, IB = 50mA(*) IC = 1A, IB = 100mA(*) IC = 2A, IB = 20mA(*) IC = 2A, IB = 40mA(*) IC = 4A, IB = 200mA(*) IC = 6A, IB = 600mA(*) IC = 2A, IB = 20mA(*) IC = 6A, IB = 600mA(*) IC = 2A, VCE = 2V(*) IC = 6A, VCE = 2V(*) IC = 10mA, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 2A, VCE = 2V(*) IC = 6A, VCE = 2V(*) IC = 10A, VCE = 2V(*) MHz IC = 100mA, VCE =10 V f = 50MHz or or 50 20 100 50 40 70 60 350 140 200 250 900 1150 900 1050 700 nA A nA nA mV mV mV mV mV mV mV mV mV mV mV 30 pF VCB = 10V, f = 1MHz VCC = 10V, IC = 1A, IB1 = IB2 = 100mA NOTES: (*) Measured under pulsed conditions. Pulse width Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN19055DZ Typical characteristics Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN19055DZ Package outline - SOT89 D D1 C A H E E1 L B B1 e e1 DIM A B B1 C D E Millimeters Min 1.40 0.44 0.36 0.35 4.40 2.29 Max 1.60 0.56 0.48 0.44 4.60 2.60 Inches Min 0.550 0.017 0.014 0.014 0.173 0.090 Max 0.630 0.022 0.019 0.019 0.181 0.102 DIM E1 e e1 H L Millimeters Min 2.13 Max 2.29 Inches Min 0.084 Max 0.090 1.50 BSC 3.00 BSC 3.94 0.89 4.25 1.20 - 0.059 BSC 0.118 BSC 0.155 0.155 0.167 0.167 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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