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2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 (Previous ADE-208-1367(Z)) Rev.3.00 Feb.14.2005 Features * High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, D = 45%min. (f = 836.5 MHz) * Compact package capable of surface mounting Outline PLZZ0004CA-A (Previouscode:UPAK) D 2 3 G 1 1.Gate 2.Source 3.Drain 4.Source 4 S Note: Marking is "BX". This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse) Note1 Pch Note2 Tch Tstg Ratings 17 10 0.4 1 3 150 -45 to +150 Unit V V A A W C C Rev.3.00, Feb.14.2005, page 1 of 4 2SK2596 Electrical Characteristics (Ta = 25C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Drain Efficiency Symbol IDSS IGSS VGS(off) Ciss Coss Pout D Min. -- -- 0.4 -- -- 30.2 45 Typ -- -- -- 22 10.5 31.46 55 Max. 10 5.0 1.1 -- -- -- -- Unit A A V pF pF dBm % Test Conditions VDS = 12 V, VGS = 0 VGS = 10 V, VDS = 0 ID = 2 mA, VDS = 12 V VGS = 5 V, VDS = 0, f = 1 MHz VDS = 12 V, VGS = 0, f = 1 MHz VDS = 12 V, f = 836.5 MHz Pin = 18 dBm VDS = 12 V, Pout = 30.2 dBm f = 836.5 MHz, Pin = 18 dBm Main Characteristics Maximum Channel Power Dissipation Curve Typical Output Characteristics 3.0 Pulse test 2.5 3 Pch (W) 4 10 V 8V (A) Channel Power Dissipation 2.0 6V 5V 4V 3V 1 Drain Current 2 ID 1.5 1.0 0.5 VGS = 2 V 0 50 100 150 Tc (C) 200 0 2 4 6 8 (V) 10 Case Temperature Drain to Source Voltage VDS Forward Transfer Admittance vs. Drain Current Typical Transfer Characteristics 1.0 1.0 Forward Transfer Admittance |yfs| (S) (A) 0.8 Tc = -25C 25C 75C 0.5 Tc = -25C 25C ID 0.2 0.1 75C 0.6 Drain Current 0.4 0.05 0.2 VDS = 12 V Pulse Test 1 2 3 4 VGS (V) 5 0.02 VDS = 12 V Pulse Test 0.05 0.1 0.2 0.5 1 0 0.01 0.01 0.02 Gate to Source Voltage Drain Current ID (A) Rev.3.00, Feb.14.2005, page 2 of 4 2SK2596 Drain to Source Saturation Voltage vs. Drain Current Drain to Source Saturation Voltage V DS(sat)(V) Gate to Source Cutoff Voltage vs. Ambient Temperature 1.2 Gate to Source Cutoff Voltage VGS(off) (V) 10 5 2 1 0.5 0.2 0.1 VDS = 12 V Pulse Test 0.05 0.1 0.2 0.5 1 75C Tc = -25C 25C 1.0 0.8 0.6 0.4 0.2 VDS = 12 V 0 -25 0 25 50 75 100 125 10 mA 1 mA ID = 0.1 m A 0.05 0.02 0.01 0.01 0.02 Drain Current ID (A) Input Capacitance vs. Gate to Source Voltage 24 Output Capacitance Coss (pF) Input Capacitance Ciss (pF) Ambient Temperature Ta (C) Output Capacitance vs. Drain to Source Voltage 100 50 20 10 5 VGS = 0 f = 1 MHz 20 22 20 18 16 14 -10 VDS = 0 f = 1 MHz -6 -2 2 6 10 Gate to Source Voltage VGS (V) 2 1 0.5 1 2 5 10 0.1 0.2 Drain to Source VDS (V) Reverse Transfer Capacitance Crss (pF) Reverse Transfer Capacitance vs. Gate to Source Voltage 100 50 Output Power Po (W) Output Power, Drain Efficiency vs. Input Power 2.5 VDS = 12 V IDO = 100 mA 2.0 f = 836.5 MHz 1.5 Po D 1.0 40 100 (%) Drain Efficiency D 80 20 10 5 VGS = 0 f = 1 MHz 0.5 1 2 5 10 20 60 2 0.5 20 0 1 0.1 0.2 0 20 40 60 80 100 Gate to Source Voltage VGS (V) Input power Pin (W) Rev.3.00, Feb.14.2005, page 3 of 4 2SK2596 Package Dimensions JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 0.1 1.5 1.5 3.0 Ordering Information Part Name 2SK2596BX 1000 Quantity 178 taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Feb.14.2005, page 4 of 4 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) 1 2.5 0.1 4.25 Max 0.4 1.8 Max 1.5 0.1 0.44 Max (1.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. 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Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0 |
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