NTE184 (NPN) & NTE185 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch
Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits. Features: D Excellent Safe Area Limits Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12C/W Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 0.1A, IB = 0, Note 1 ICEO ICEX ICBO Emitter Cutoff Current IEBO VCE = 80V, IB = 0 VCE = 80V, VEB(off) = 1.5V VCE = 80V, VEB(off) = 1.5V, TC = +150C VCB = 80V, IE = 0 VBE = 5V, IC = 0 80 - - - - - - - - - - - - 1.0 0.1 2.0 0.1 1.0 V mA mA mA mA mA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter ON Characteristics (Note 1) DC Current Gain hFE VCE(sat) VBE(on) fT IC = 1.5A, VCE = 2V IC = 4A, VCE = 2V Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.15A IC = 4A, IB = 1A Base-Emitter ON Voltage Dynamic Characteristics Current Gain-Bandwidth Product IC = 1A, VCE = 10V, f = 1MHz 2.0 - - MHz IC = 1.5A, VCE = 2V 20 7 - - - - - - - - 80 - 0.6 1.4 1.2 V V V Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse test: Pulse Width 300s, Duty Cycle 2%. Note 2. NTE184MP is a matched pair of NTE184 with their DC Current Gain (hFE) matched to within 10% of each other. Note 3. NTE185MCP is a matched complementary pair containing 1 each of NTE184 (NPN) and NTE185 (PNP).
.330 (8.38) Max .175 (4.45) Max
.450 (11.4) Max
.118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B
.090 (2.28) .130 (3.3) Max
|
