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| SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES KDV257E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK Low Series Resistance : rs=0.50 (Max.) C 1 E MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 10 150 -55 150 UNIT V 2 D F B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance VR IR C1V C2V K rS ) TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=2V, f=1MHz VR=1V, f=470MHz MIN. 10 19.5 14.3 1.3 TYP. MAX. 10 23.5 17.6 0.5 UNIT V nA pF SYMBOL Marking Type Name EA 2001. 6. 11 Revision No : 0 1/2 KDV257E I R - VR 100 REVERSE CURRENT I R (pA) Ta=25 C C - VR 100 f=1MHz Ta=25 C 10 CAPACITANCE C (pF) 10 1 0 2 4 6 8 10 1 0 2 4 6 8 10 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2001. 6. 11 Revision No : 0 2/2 |
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