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| ZT91 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) General purpose NPN Transistor in a hermetic TO39 package. 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 1 2 .7 0 (0 .5 0 0 ) m in . 5 .0 8 (0 .2 0 0 ) ty p . 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) ! 2 .5 4 (0 .1 0 0 ) VCEO = 100V IC = 1A PT = 5W 45 TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO VCER IC PTOT Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector - Emitter Sustaining Voltage Collector Current Dissipation @ Tamb = 25C @ Case Temp. = 100C @ Case Temp. = 25C Derating linearly Storage and Operatuing Junction Temperature 120V 100V 6V 100V 1A 1W 2.9W 5W 175C -65 to 175C Tstg,Tj Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.3/00 ZT91 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(SUS) Collector - Emitter Sustaining Voltage VCE(sat) VBE(sat) ICBO IEBO hFE fT NF Cob Cib Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Collector Cut-off Current Emitter - Base Reverse Current DC Current Gain Gain Bandwidth Product Noise Figure Output Capacitance Input Capacitance Test Conditions IC = 10mA IC = 200mA IC = 200mA VCB=VCE VEB = 5V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCB = 10V VEB = 1V IB = 0 IB = 20mA IB = 20mA IE = 0 Tamb = 100C IC = 0 IC = 10mA IC = 200mA IC = 50mA f = 10MHz IC = 300mA f = 1KHz f=0 f=0 Min. 100 Typ. Max. Unit 1.2 1.5 1 60 0.1 V -- MHz dB 25 100 pF V 30 40 60 250 6 120 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.3/00 |
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