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HF220-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF220-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications.
PACKAGE STYLE .500 4L FLG
.112x45 A FULL R L
FEATURES:
* PG = 13 dB Typical at 220 W/30 MHz * IMD3 = -30 dBc Max. at 220 W(PEP) * OmnigoldTM Metalization System * 50 V operation
C B
E
C
O.125 NOM.
B
E H D G F
E
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG JC
O O
IJ
K
12 A 110 V 55 V 4.0 V 320 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.7 C/W
O O O O
DIM A B C D E F G H I J K L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81
.230 / 5.84
.255 / 6.48 .7.30 / 18.54
.980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10614
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICEO ICES hFE Cob GP IMD3 C
TC = 25 C
O
NONETEST CONDITIONS
IC = 200 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 55 V VCE = 6 V VCB = 50 V IC = 10 A f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
110 55 4.0 5 10 15 80 390 13 -30
UNITS
V V V mA mA --pF dB dBc %
VCE = 50 V ICQ =150 mA f1 = 30.000 MHz
POUT = 220 W (PEP) f2 = 30.001 MHz
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B 1/2
HF220-50 ERROR! REFERENCE SOURCE NOT FOUND.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B 2/2

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