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  Datasheet File OCR Text:
 Transistor
2SB1378
Silicon PNP epitaxial planer type
For low-frequency power amplification Complementary to 2SD1996
6.90.1
Unit: mm
1.05 2.50.1 (1.45) 0.05 0.8
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25C)
Ratings -25 -20 -7 -1 - 0.5 600 150 -55 ~ +150 Unit V V V A A mW C C
0.45-0.05
+0.1
1
2
3
0.45-0.05
2.50.5
2.50.5
+0.1
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT1 Type Package
1.20.1 0.65 max. 0.45+0.1 - 0.05
2.50.1
(HW type)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*1h
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -25V, IE = 0 VCE = -20V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -500mA, IB = -50mA*2 IC = -500mA, IB = -50mA*2 150 15
*2
min
typ
max -100 -1
14.50.5
0.85
Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping.
0.65 max.
1.0
3.50.1
s Features
0.15
0.7
4.0
0.8
Unit nA A V V V
-25 -20 -7 90 25 - 0.4 -1.2 350
V V MHz
VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz
25
pF
Pulse measurement
FE1
Rank classification
Q 90 ~ 155 R 130 ~ 220 S 180 ~ 350
Rank hFE1
1
Transistor
PC -- Ta
800 -1.2 Ta=25C 700 -1.0 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0 -1 -2 -3 -4 -5 -6 IB=-10mA
2SB1378
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
-100 -30 -10 -3 -1 Ta=75C 25C -25C
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (mW)
Collector current IC (mA)
- 0.8
-9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA
- 0.6
- 0.4
- 0.3 - 0.1 - 0.03
- 0.2
- 0.01 - 0.01 - 0.03 - 0.1 - 0.3
-1
-3
-10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
-100
hFE -- IC
IC/IB=10 600 VCE=-2V 320
fT -- I E
VCB=-10V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
500
Transition frequency fT (MHz)
-1 -3 -10
-30 -10 -3 25C -1 Ta=-25C 75C
Forward current transfer ratio hFE
280 240 200 160 120 80 40
400
300
Ta=75C 25C
- 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3
200 -25C 100
-1
-3
-10
0 - 0.01 - 0.03 - 0.1 - 0.3
0 1 3 10 30 100 300 1000
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob -- VCB
80
Collector output capacitance Cob (pF)
70 60 50 40 30 20 10 0 -1
IE=0 f=1MHz Ta=25C
-3
-10
-30
-100
Collector to base voltage VCB (V)
2


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