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APT5024BFLL APT5024SFLL
500V 22A 0.240
BFLL D3PAK
TO-247
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SFLL
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT5024BFLL_SFLL UNIT Volts Amps
500 22 88 30 40 265 2.12 -55 to 150 300 22 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 22 0.240 250 1000 100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 11A)
Ohms A nA Volts
1-2005 050-7131 Rev C
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT5024BFLL_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 22A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 22A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 333V VGS = 15V ID = 22A, RG = 5 ID = 22A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
1900 417 27 43 12 24 8 6 18 2 167 86 262 99
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
22 88 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -ID 22A)
dv/ 5 dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID 22A, di/dt = 100A/s) Reverse Recovery Charge (IS = -ID 22A, di/dt = 100A/s) Peak Recovery Current (IS = -ID 22A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
250 400 1.9 6 15 26
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.47 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.50
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 3.97mH, RG = 25, Peak IL = 22A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID27A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0 0.05 10-5 10-4 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
1-2005
050-7131 Rev C
Z
JC
SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
60 50 40 30 20 10 0 VGS=15 &10V 8V 7.5V 7V 6.5V 6V 5.5V
APT5024BFLL_SFLL
RC MODEL Junction temp. ( "C) 0.205 Power (Watts) 0.264 Case temperature 0.0981F 0.00544F
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 60 50 40 30 20 TJ = +125C 10 0 TJ = +25C 0 TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT VGS=10V VGS=20V
NORMALIZED TO V = 10V @ 11A
GS
ID, DRAIN CURRENT (AMPERES)
12 34567 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
ID, DRAIN CURRENT (AMPERES)
20
15
10
5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 11A = 10V
GS
0 25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-7131 Rev C
1-2005
89
OPERATION HERE LIMITED BY RDS (ON)
10,000 5,000
APT5024BFLL_SFLL
ID, DRAIN CURRENT (AMPERES)
Ciss
C, CAPACITANCE (pF)
1,000 Coss
100S 10
100
TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 500
1mS 10mS 10
Crss 0 10 20 30 40 50
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
VDS=100V VDS=250V
IDR, REVERSE DRAIN CURRENT (AMPERES)
I
= 22A
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
12
VDS=400V
8
TJ =+150C 10
TJ =+25C
4
20 30 40 50 60 70 80 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 40 td(off) 30
0
0
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 50
V
DD G
= 333V
R
= 5
40
V
DD G
T = 125C
J
L = 100H = 333V
td(on) and td(off) (ns)
tr and tf (ns)
R
= 5
30 tf 20 tr
20
T = 125C
J
L = 100H
10
td(on)
10
0
0
20 30 40 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
20 30 40 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 500 Eoff
SWITCHING ENERGY (J)
0
0
10
500
= 333V R = 5
SWITCHING ENERGY (J)
400
T = 125C
J
L = 100H E ON includes diode reverse recovery.
Eon
400 Eon
300
300
200
200
V I
1-2005
DD
= 333V
D J
= 22A
100
Eoff
100
T = 125C L = 100H E ON includes diode reverse recovery.
050-7131 Rev C
20 30 40 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
10
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT5024BFLL_SFLL
Gate Voltage
10 % TJ = 125 C td(on) tr 5% 90% 5% 10 %
Drain Voltage
90%
Gate Voltage T = 125 C J
td(off)
Drain Current
Drain Voltage
90% t f 10% 0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
Drain (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 1.04 (.041) 1.15 (.045) 13.41 (.528) 13.51 (.532)
3
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7131 Rev C
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
1-2005
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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