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| QSZ4 Transistors General purpose transistor (isolated transistor and diode) QSZ4 A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package. Applications DC / DC converter Motor driver External dimensions (Unit : mm) QSZ4 2.8 1.6 Features 1) Low VCE(sat) 2) Small package 0.16 (3) (4) 0.30.6 Structure Silicon epitaxial planar transistor ROHM : TSMT5 Abbreviated symbol : Z04 Equivalent circuit (5) (4) Tr1 Tr2 (1) (2) (3) Packaging specifications Type QSZ4 TSMT5 Z04 TR 3000 Package Marking Code Basic ordering unit(pieces) 00.1 Each lead has same dimensions 0.85 0.7 0.95 0.95 1.9 2.9 0.4 (2) (1) (5) 1/4 QSZ4 Transistors Absolute maximum ratings (Ta=25C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP Pc Tj Tstg Limits -30 -30 -6 -2 -4 500 1.25 0.9 150 -55 to +150 Unit V V V A 1 A mW/Total 2 W/Total 3 W/Element 3 C C 1 Single pulse, Pw=1ms. 2 Each terminal mounted on a recommended land. 3 Mounted on a 25x25x t 0.8mm ceramic substrate. Tr 2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP Pc Tj Tstg Limits 30 30 6 2 4 500 1.25 0.9 150 -50 to +150 Unit V V V A 1 A mW/Total 2 W/Total 3 W/Element 3 C C 1 Single pulse, Pw=1ms. 2 Each terminal mounted on a recommended land. 3 Mounted on a 25x25x t 0.8mm ceramic substrate. Electrical characteristics (Ta=25C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -30 -30 -6 - - - 270 - - Typ. - - - - - -180 - 280 20 Max. - - - -100 -100 -370 680 - - Unit V V V nA nA mV - MHz pF Conditions IC= -10A IC= -1mA IE= -10A VCB= -30V VEB= -6V IC= -1.5A, IB= -75mA VCE= -2V, IC= -200mA VCE= -2V, IE=200mA, f=100MHz VCB= -10V, IE=0A, f=1MHz Tr 2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 30 6 - - - 270 - - Typ. - - - - - 180 - 280 20 Max. - - - 100 100 370 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=10A IC=1mA IE=10A VCB=30V VEB=6V IC=1.5A, IB=75mA VCE=2V, IC=200mA VCE=2V, IE= -200mA, f=100MHz VCB=10V, IE=0A, f=1MHz 2/4 QSZ4 Transistors Electrical characteristic curves Tr1(PNP) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 1000 Ta=100 C VCE= -2V Pulsed 10 IC/IB=20/1 Pulsed 10 Ta=25 C Pulsed DC CURRENT GAIN : hFE Ta=25 C 1 Ta=-40 C 100 1 IC/IB=50/1 0.1 Ta=-40 C IC/IB=20/1 IC/IB=10/1 Ta=25 C Ta=100 C 0.01 0.001 10 0.001 0.01 0.1 1 10 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DV current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs. collector current Fig.3 Base-emitter saturation voltage vs. collectir current 10 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT :IC (A) VBE=2V Pulsed Ta=25 C VCE= -2V f=100MHz 10000 Ta=25 C VCE= -12V IC/IB=20/1 Pulsed tstg SWITCHINGTIME : (ns) Ta=100 C 1 1000 Ta=25 C Ta=-40 C 100 100 tf tdon 0.1 10 tr 10 0.01 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) 0.1 1 10 1 0.01 0.1 1 10 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC(A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter curent Fig.6 Switching time 1000 COLLECTOR CURRENT :IC (A) Cib IC=0A f=1MHz Ta=25 C 100 Cob 10 1 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VBE (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 QSZ4 Transistors Tr2(NPN) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 1000 VCE=-2V Pulsed 10 10 Ta=125 C IC/IB=20/1 Pulsed IC/IB=20/1 Pulsed DC CURRENT GAIN : hFE Ta=25 C Ta=-25 C Ta=-25 C 1 Ta=25 C Ta=-25 C Ta=125 C 1 Ta=25 C 100 Ta=125 C 0.1 10 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.8 DC current gain vs. collector current Fig.9 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.10 Base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) VCE=-2V Pulsed COLLECTOR CURRENT : IC (A) Ta=25 C VCE=-2V f= 100MHz EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 1000 1000 IC=0A f=1MHz Ta=25 C 1 Ta=125 C Ta=25 C Ta=-25 C Cob 0.1 100 100 Cib 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 10 0.01 0.1 1 10 10 0.001 0.01 0.1 1 10 100 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.11 Grounded emitter propagation characteristics Fig.12 Gain bandwidth product vs. emitter current Fig.13 Collector output chapacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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