View NE894M13_1102677.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NPN SILICON TRANSISTOR NE894M13
FEATURES
* * * * * NEW MINIATURE M13 PACKAGE: - Smalltransistoroutline -1.0X0.5X0.5mm -Lowprofile/0.50mmpackageheight -FlatleadstyleforbetterRFperformance IDEAL FOR > 3 GHz OSCILLATORS LOW NOISE, HIGH GAIN LOW Cre UHSO 25 GHz PROCESS
OUTLINE DIMENSIONS(Unitsinmm)
PACKAGE OUTLINE M13
0.15+0.1 n0.05
0.70.05 0.5+0.1 n0.05
0.2+0.1 n0.05
(Bottom View)
0.3
0.35
2
1.0+0.1 n0.05
3
B7
0.7 0.35 0.15+0.1 n0.05
1
DESCRIPTION
NEC'sNE894M13transistorisdesignedforoscillatorapplicationsabove3GHz.TheNE894M13featureslowvoltage,low currentoperation,lownoise,andhighgain.NEC'snewlow profile/flatleadstyle"M13"packageisidealfortoday'sportable wirelessapplications.
0.1
0.1
0.2
0.2
0.125+0.1 n0.05
0.50.05
PIN CONNECTIONS
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS(TA=25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE UNITS GHz dB pF nA nA dB MIN 17 11 - - - -
NE894M13 2SC5787 M13 TYP 13 20 MAX - -
SYMBOLS |S21E|2 |NF ICBO IEBO hFE Cre fT
PARAMETERS AND CONDITIONS InsertionPowerGainatVCE=1V,IC=20mA,f=2GHz ReverseTransferCapacitance3atVCB=0.5V,IE=0mA,f=1MHz CollectorCutoffCurrentatVCB=5V,IE=0 EmitterCutoffCurrentatVEB=1V,IC=0 DCCurrentGain2atVCE=1V,IC=5mA NoiseFigureatVCE=1V,IC=5mA,f=2GHz,ZS=ZOPT GainBandwidthatVCE=1V,IC=20mA,f=2GHz
0.22 - - -
1.4
0.30 100 100 100
2.5
Notes: 1.ElectronicIndustrialAssociationofJapan. 2.Pulsedmeasurement,pulsewidth 350s,dutycycle2%. 3.Collectortobasecapacitancewhentheemitterisgrounded
50
California Eastern Laboratories
NE894M13 ABSOLUTE MAXIMUM RATINGS1(TA=25C)
SYMBOLS VCBO VCEO VEBO IC PT
2
PARAMETERS
UNITS V V V
RATINGS 9 1.5 35 105 150 3.0
ORDERING INFORMATION
PART NUMBER NE894M13-A NE894M13-T3-A QUANTITY 50PCS(Nonreel) 10kpcs/reel

CollectortoBaseVoltage CollectortoEmitterVoltage EmittertoBaseVoltage CollectorCurrent TotalPowerDissipation JunctionTemperature StorageTemperature
mA mW C C
TJ
TSTG
-65to+150
Notes: 1. Operationinexcessofanyoneoftheseparametersmayresult inpermanentdamage. 2.Withdevicemountedon1.08cm2X1.0mmglassepoxyboard.
TYPICAL PERFORMANCE CURVES (TA=25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE ReverseTransferCapacitance,Cre(pF)
150
REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
0.5 f = 1 MHz
TotalPowerDissipation,Ptot(mW)
Mounted on Glass epoxy PCB (1.08 cm 2 x 1.0 mm (t) ) 125
105
0. 4
100
0. 3
75
0. 2
50
25
0. 1
0
0 0 2 4 6 8 10
0
25
50
75
100
125
150
AmbientTemperature,TA(C)
CollectortoBaseVoltage,VCB(V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 40 V CE = 1 V
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
500 A 450 A 400 A 350 A 30 300 A 250 A 20 200 A 150 A 10 100 A
CollectorCurrent,IC(mA)
1
0.1
0.01
0.001 IB = 500 A 0.000 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 1 2 3 4 5
CollectorCurrent,IC(mA)
10
BasetoEmitterVoltage,VBE(V)
CollectortoEmitterVoltage,VCE(V)
NE894M13 TYPICAL PERFORMANCE CURVES (TA=25C)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
28
InsertionPowerGain,|S21e|2(dB) MaximumAvailableGain,MAG(dB) MaximumStableGain,MSG(dB)
GainBandwidthProduct,fT(GHz)
V CE = 1 V f = 2 GHz
40 35 30 25 20 15 10 5 0
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
V CE = 1 V IC = 20 mA
24 20 16 12 8 4 0
MSG MAG
|S 21e|2
1
10
100
0.1
1
10
CollectorCurrent,IC(mA)
Frequency,f(GHz)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20
20
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
V CE = 2 V f = 2 G Hz
InsertionPowerGain,|S21e|2(dB) MaximumAvailableGain,MAG(dB) MaximumStableGain,MSG(dB)
InsertionPowerGain,|S21e| (dB) MaximumAvailableGain,MAG(dB) MaximumStableGain,MSG(dB)
V CE = 2 V f = 2 G Hz 16 MSG MAG
2
16
MSG
12
12
|S 21e|2
8
8
4
|S 21e|2
4
0 1 10 100
0 1 10 100
CollectorCurrent,IC(mA)
CollectorCurrent,IC(mA)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20
InsertionPowerGain,|S21e|2(dB) MaximumAvailableGain,MAG(dB) MaximumStableGain,MSG(dB)
16
InsertionPowerGain,|S21e| (dB) MaximumAvailableGain,MAG(dB) MaximumStableGain,MSG(dB)
V CE = 1 V f = 4 GHz
V CE = 2 V f = 4 GHz 16
12
2
MS G
MAG
12
MS G
MAG
8 |S 21e|2 4
8 |S 21e|2 4
0 1 10 100
0 1 10
CollectorCurrent,IC(mA)
CollectorCurrent,IC(mA)
100
AssociatedGain,Ga(dB)
MAG
NE894M13 TYPICAL PERFORMANCE CURVES (TA=25C)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 Ga 20 5 Ga
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
20
AssociatedGain,Ga(dB)
4
16
3
12
3
12
2
8
2
8
1
NF V CE = 1 V f = 1 GHz
4
1
NF V CE = 1 V f = 2 GHz
4
0 1 10
100
0
0 1 10
100
0
CollectorCurrent,IC(mA)
CollectorCurrent,IC(mA)
AssociatedGain,Ga(dB)
NoiseFigure,NF(dB)
4
16
NoiseFigure,NF(dB)
NE894M13 TYPICAL SCATTERING PARAMETERS(TA=25C)
j50 j25 j100
90 120
S21
60
150
j10
S12
30
S 11
0
10
25
50
100
0
180
0
-j10
S 22
-j25 -j50 -j100
-150
-30
-120 -90
0.100 to 12.000 GHz by 0.050
-60
0.100 to 12.000GHz by 0.050
NE894M13 VC = 1 V, IC = 5 mA
FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 MAG 0.772 0.747 0.715 0.677 0.612 0.575 0.544 0.517 0.493 0.474 0.383 0.362 0.355 0.352 0.339 0.359 0.394 0.432 0.466 0.489 0.489
S11
ANG -11.0 -24.6 -36.5 -47.7 -59.5 -68.8 -76.9 -84.6 -91.3 -97.3 -135.0 -155.9 -175.7 169.2 158.2 145.9 132.7 121.6 110.0 99.5 92.9
MAG 13.002 12.548 11.948 11.241 10.457 9.699 8.993 8.364 7.756 7.228 4.155 2.920 2.253 1.821 1.561 1.390 1.251 1.137 1.026 0.930 0.878
S21
ANG 169.8 159.5 150.4 142.4 134.1 127.9 122.5 117.7 113.5 109.6 84.4 68.1 54.6 44.0 36.0 28.0 20.9 14.9 10.5 8.9 9.3
MAG 0.011 0.022 0.032 0.040 0.046 0.051 0.056 0.059 0.062 0.065 0.088 0.120 0.162 0.215 0.281 0.358 0.438 0.513 0.569 0.609 0.653
S12
ANG 85.6 76.8 70.6 66.2 61.3 58.2 56.5 54.9 54.1 53.6 58.8 67.4 72.0 73.4 72.6 68.5 62.5 55.6 48.7 43.9 40.4
MAG 0.966 0.928 0.883 0.835 0.758 0.707 0.658 0.623 0.590 0.558 0.411 0.383 0.412 0.476 0.512 0.522 0.523 0.521 0.543 0.572 0.567
S22
ANG -8.4 -15.8 -22.5 -28.3 -31.4 -35.7 -39.1 -41.6 -44.1 -45.9 -59.5 -73.2 -88.5 -98.4 -103.6 -114.0 -127.0 -142.1 -157.6 -165.7 -168.8
K 0.10 0.17 0.22 0.27 0.39 0.44 0.50 0.54 0.59 0.65 1.01 1.10 1.05 0.95 0.86 0.81 0.79 0.80 0.84 0.87 0.90
(dB) 30.55 27.54 25.75 24.50 23.57 22.79 22.09 21.50 20.94 20.46 16.27 11.97 10.08 9.28 7.44 5.89 4.56 3.45 2.56 1.84 1.28
MAG1
Note: 1. GainCalculations:
MAG =
MAG=MaximumAvailableGain MSG=MaximumStableGain
|S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | D | - |S11| - |S22| , D = S11 S22 - S21 S12 |S12| 2 |S12 S21|
NE894M13 TYPICAL SCATTERING PARAMETERS(TA=25C)
j50 j25 j100
90 120
S21
60
150
j10
S12
30
S 11
0
10
25
50
100
0
180
0
-j10
S 22
-j25 -j50 -j100
-150
-30
-120 -90
0.100 to 12.000 GHz by 0.050
-60
0.100 to 4.000GHz by 0.050
NE894M13 VC = 1 V, IC = 20 mA
FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 MAG 0.401 0.374 0.345 0.323 0.290 0.282 0.277 0.274 0.273 0.271 0.272 0.275 0.278 0.268 0.243 0.262 0.300 0.343 0.386 0.417 0.423
S11
ANG -25.4 -50.1 -69.6 -85.0 -100.7 -111.9 -119.6 -126.5 -132.5 -137.0 -162.0 -176.0 167.1 153.9 146.2 138.9 129.8 122.0 112.1 102.2 96.7
MAG 29.774 26.263 22.629 19.474 16.742 14.691 13.024 11.685 10.574 9.642 5.122 3.539 2.723 2.223 1.922 1.720 1.565 1.439 1.316 1.199 1.123
S21
ANG 160.5 145.4 133.7 124.8 117.7 112.3 108.0 104.4 101.2 98.5 80.3 67.7 56.9 47.9 40.4 32.9 25.9 19.5 13.9 10.5 8.8
MAG 0.009 0.018 0.024 0.029 0.034 0.038 0.043 0.047 0.051 0.056 0.100 0.147 0.196 0.245 0.300 0.360 0.421 0.482 0.532 0.572 0.617
S12
ANG 82.2 74.2 71.0 68.3 67.8 67.6 68.0 68.5 69.0 69.5 72.3 71.6 69.5 66.9 64.6 60.8 56.4 51.5 46.5 42.8 40.2
MAG 0.879 0.786 0.689 0.607 0.506 0.450 0.405 0.374 0.349 0.324 0.228 0.221 0.261 0.331 0.369 0.379 0.384 0.389 0.425 0.472 0.488
S22
ANG -15.8 -28.2 -37.3 -43.9 -46.3 -50.3 -53.1 -54.5 -56.2 -57.3 -66.9 -80.0 -95.5 -101.9 -102.7 -111.1 -122.9 -136.9 -152.2 -159.8 -161.6
K 0.40 0.45 0.54 0.63 0.75 0.81 0.86 0.90 0.93 0.95 1.06 1.05 1.03 0.99 0.95 0.91 0.89 0.88 0.88 0.88 0.88
(dB) 35.10 31.74 29.72 28.21 26.95 25.83 24.84 23.94 23.14 22.37 15.65 12.37 10.35 9.58 8.07 6.80 5.70 4.75 3.93 3.21 2.60
MAG1
Note: 1. GainCalculations:
MAG =
MAG=MaximumAvailableGain MSG=MaximumStableGain
|S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | D | - |S11| - |S22| , D = S11 S22 - S21 S12 |S12| 2 |S12 S21|
NE894M13 TYPICAL SCATTERING PARAMETERS(TA=25C)
j50 j25 j100
90 120
S21
60
150
j10
S12
30
S 11
0
10
25
50
100
0
180
0
-j10
S 22
-j25 -j50 -j100
-150
-30
-120 -90
-60
0.100 to 12.000 GHz by 0.050
0.100 to 12.000GHz by 0.050
NE894M13 VC = 2 V, IC = 10 mA
FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 MAG 0.634 0.601 0.559 0.515 0.451 0.417 0.391 0.369 0.351 0.337 0.279 0.266 0.262 0.255 0.237 0.259 0.300 0.347 0.392 0.425 0.433
S11
ANG -14.2 -30.0 -43.3 -55.3 -67.4 -77.1 -84.8 -92.2 -98.6 -104.1 -137.6 -155.9 -175.2 170.3 161.9 151.8 139.9 129.8 117.8 106.1 99.2
MAG 21.168 19.847 18.259 16.598 14.913 13.497 12.240 11.177 10.239 9.431 5.194 3.616 2.787 2.259 1.936 1.731 1.571 1.439 1.303 1.170 1.080
S21
ANG 166.5 154.5 144.2 135.6 127.5 121.5 116.5 112.3 108.5 105.2 83.8 69.6 57.5 47.6 39.8 32.0 24.6 17.8 12.0 8.7 7.5
MAG 0.010 0.017 0.024 0.029 0.034 0.038 0.042 0.045 0.049 0.052 0.084 0.123 0.168 0.217 0.276 0.344 0.418 0.493 0.555 0.600 0.648
S12
ANG 85.7 75.7 70.8 67.6 64.9 63.7 63.5 63.2 63.5 63.9 70.4 74.0 74.7 73.9 72.7 69.3 64.4 58.5 52.3 47.5 44.1
MAG 0.945 0.890 0.826 0.763 0.676 0.621 0.572 0.539 0.510 0.481 0.363 0.345 0.373 0.439 0.483 0.499 0.505 0.508 0.535 0.573 0.581
S22
ANG -10.0 -18.5 -25.6 -31.2 -33.5 -37.1 -39.6 -41.3 -42.9 -43.9 -52.7 -64.5 -79.7 -89.6 -93.7 -102.7 -114.4 -128.5 -144.5 -153.9 -157.6
K 0.19 0.28 0.36 0.43 0.56 0.62 0.68 0.73 0.78 0.82 1.04 1.05 1.00 0.93 0.86 0.81 0.78 0.77 0.78 0.80 0.82
(dB) 33.43 30.64 28.79 27.51 26.40 25.49 24.65 23.93 23.24 22.61 16.74 13.31 11.92 10.17 8.47 7.02 5.75 4.65 3.71 2.90 2.22
MAG1
Note: 1. GainCalculations:
MAG =
MAG=MaximumAvailableGain MSG=MaximumStableGain
|S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | D | - |S11| - |S22| , D = S11 S22 - S21 S12 |S12| 2 |S12 S21|
NE894M13 NONLINEAR MODEL SCHEMATIC
CCBPKG
0.05 pF
CCB
0.01 pF
LCPKG
0.05 nH
LBPKG
0.05 nH
LB
0.3 nH
Collector Q1 CCE
0.4 pF
Base
LE
0.42 nH
CCEPKG
0.05 pF
LEPKG
0.05 nH
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters BF VAF IKF NE BR ISE NF IS Q1 137e-18 129 0.9992 22.4 2.8 2.5 Parameters XCJC CJS MJS FC TF XTF VTF ITF TR PTF EG VJS MJC Q1 0.24 0.3 0
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX NE894M13 0.01pF 0.4pF 0.3nH 0.42nH 0.05pF 0.05pF 0.05nH 0.05nH 0.05nH
0.75 0 0.55 0.05 0.005 1.0e-9 1.11 0 3 117e-15 1.34 0 0.5
229e-15 81.7 1.9
5e-12
VAR IKR ISC NC RE RB RBM IRB RC
NR
0.9944 0.018 1.17 0.75 5 3 6
227e-18
MODELTESTCONDITIONS Frequency: 0.1to10GHz Bias: VCE=0.5Vto2V,IC=0.5mAto20mA Date: 11/2001
XTB XTI AF KF
0.005 0.68e-12 0.92 0.16e-12 0.64 0.26
CJE MJE CJC VJC VJE
(1)Gummel-PoonModel
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
Internet: http://WWW.CEL.COM
02/14/2007
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.

▲Up To Search▲

Price & Availability of NE894M13

	To Download NE894M13 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .