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NTJS4405N Small Signal MOSFET
25 V, 1.2 A, Single, N-Channel, SC-88
Features
* Advance Planar Technology for Fast Switching, Low RDS(on) * Higher Efficiency Extending Battery Life * Pb-Free Packages are Available
Applications
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V(BR)DSS 25 V RDS(on) Typ 249 mW @ 4.5 V 299 mW @ 2.7 V N-Channel Drain 1 2 5 6 ID Max 1.2 A
* Boost and Buck Converter * Load Switch * Battery Protection
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Continuous Drain Current (Note 1) Power Dissipation (Note 1) Power Dissipation (Note 1) Pulsed Drain Current t<5s Steady State TA = 25C TA = 25C TA = 75C PD PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID ID Value 25 "8.0 1.2 1.0 0.80 0.63 0.89 3.7 -55 to +150 0.8 260 250 W W A 1 SC-88/SOT-363 CASE 419B Unit V V A A Gate 3
Source 4
MARKING DIAGRAM & PIN ASSIGNMENT
D 6 TS M G G 1 D TS M G D G D S
Steady State tv5s tp = 10 ms
Operating Junction and Storage Temperature Source Current (Body Diode) (Note 1) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) ESD Rating - Machine Model
C
A C V
= Device Code = Date Code = Pb-Free Package
THERMAL RESISTANCE RATINGS
Rating Junction-to-Lead - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 5 s (Note 1) Symbol RqJL RqJA RqJA Max 102 200 140 Unit C/W
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device NTJS4405NT1 NTJS4405NT1G NTJS4405NT4 NTJS4405NT4G Package SC-88 Shipping 3000 / Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
SC-88 3000 / Tape & Reel (Pb-Free) SC-88 10,000 / Tape & Reel
SC-88 10,000 / Tape & Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
February, 2006 - Rev. 4
1
Publication Order Number: NTJS4405N/D
NTJS4405N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 4.5 V, ID = 0.6 A VGS = 2.7 V, ID = 0.2 A VGS = 4.5 V, ID = 1.2 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VSD VGS = 0 V, IS = 0.6 A TJ = 25C VGS = 4.5 V, VDS = 6.0 V, ID = 0.5 A, RG = 50 W 6.0 4.7 25 41 12 8.0 35 60 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 5.0 V, ID = 0.95 A VGS = 0 V, f = 1.0 MHz, VDS = 10 V 49 22.4 8.0 0.75 0.10 0.30 0.20 0.50 0.40 60 30 12 1.5 nC pF gFS VDS = 5.0 V, ID = 0.5 A VGS = 0 V, VDS = 20 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 25 30 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 8.0 V VGS = VDS, ID = 250 mA 0.65 -2.0 249 299 260 0.5
1.5
V mV/C
350 400
mW
S
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage 0.82 1.20 V
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTJS4405N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
5 ID, DRAIN CURRENT (AMPS) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 TJ = 25C 4 4.5 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 2 V 7V 6V 5.5 V 4.5 V VGS = 3 V ID, DRAIN CURRENT (AMPS) 2 VDS 5 V TJ = -55C
4V 3.5 V
1.5
VGS = 2.5 V
TJ = 125C
1
0.5 25C 0 0 1.5 0.5 1 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.5
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.0 0.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.4
Figure 2. Transfer Characteristics
VGS = 4.5 V
TJ = 25C VGS = 2.7 V
0.6 TJ = 125C TJ = 25C TJ = -55C 0 0 1.0 2.0 3.0 4.0 ID, DRAIN CURRENT (AMPS) 5.0 0.4 0.2
0.3
VGS = 4.5 V 0.2
0.1 0.2
0.4
1 0.6 0.8 1.2 1.4 1.6 ID, DRAIN CURRENT (AMPS)
1.8
2
Figure 3. On-Resistance vs. Drain Current and Temperature
1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1 0.8 0.6 -50 1 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
ID = 0.6 A VGS = 4.5 V
VGS = 0 V
1000 IDSS, LEAKAGE (nA) TJ = 150C 100
10
TJ = 125C
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTJS4405N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
150 125 C, CAPACITANCE (pF) 100 Crss 75 50 25 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 Ciss Coss VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 VGS = 4.5 V 4 3 QGS 2 1 0 QGD
VDS = 0 V Ciss
VGS = 0 V
TJ = 25C
QG(TOT)
VDS = 5.0 V
ID = 0.95 A TJ = 25C 0 0.2 0.4 0.6 Qg, TOTAL GATE CHARGE (nC) 0.8
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
1000
IS, SOURCE CURRENT (AMPS)
VDD = 6.0 V ID = 0.5 A VGS = 4.5 V
1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 VGS = 0 V TJ = 25C
t, TIME (ns)
100 tf td(off) 10 td(on) tr
1 1 10 RG, GATE RESISTANCE (OHMS) 100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTJS4405N
PACKAGE DIMENSIONS
SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W
D e A3
6 5 4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000
HE
1 2 3
-E-
C
b 6 PL 0.2 (0.008) A
M
L E
M
A1
SOLDERING FOOTPRINT*
0.50 0.0197
0.65 0.025 0.65 0.025
0.40 0.0157 1.9 0.0748
SCALE 20:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTJS4405N/D

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