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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 August 1995
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
FEATURES * High power gain * Low noise figure * Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment. DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. MARKING TYPE NUMBER BFG67W BFG67W/X BFG67W/XR PINNING PIN DESCRIPTION CODE V2
BFG67W BFG67W/X; BFG67W/XR
fpage
V6 V7
4
3
1 Top view
2
MBK523
BFG67W (see Fig.1) 1 2 3 4 collector base emitter emitter
alfpage
Fig.1 SOT343.
BFG67W/X (see Fig.1) 1 2 3 4 collector emitter base emitter
2 Top view 1
MSB842
3
4
BFG67W/XR (see Fig.2) 1 2 3 4 collector emitter base emitter
Fig.2 SOT343R.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain noise figure up to Ts = 85 C IC = 15 mA; VCE = 5 V IC = 0; VCE = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 8 V; f = 2 GHz open emitter open base CONDITIONS MIN. TYP. MAX. UNIT - - - - 60 - - - - - - - 100 0.5 7.5 20 10 50 500 - - - pF GHz dB dB V V mA mW
IC = 15 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 C -
15.5 - 2.2 -
August 1995
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature open base open collector CONDITIONS open emitter
BFG67W BFG67W/X; BFG67W/XR
MIN. - - - - - -65 -
MAX. 20 10 2.5 50 500 +150 175 V V V
UNIT
mA mW C C
up to Ts = 85 C; see Fig.3; note 1
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 85 C; note 1 VALUE 180 UNIT K/W
Note to the "Limiting values" and "Thermal characteristics" 1. Ts is the temperature at the soldering point of the collector pin.
handbook, halfpage
600
MBG248
P tot (mW) 400
200
0 0 50 100 150 200 T s (o C)
Fig.3 Power derating curve.
August 1995
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cc Ce Cre GUM PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain; note 1 CONDITIONS open emitter; IC = 10 A; IE = 0 open base; IC = 10 mA; IB = 0
BFG67W BFG67W/X; BFG67W/XR
MIN. - - - - 60
TYP. - - - - 100 7.5 0.7 1.3 0.5 15.5 10 1.3 1.7 2.2
MAX. 20 10 2.5 50 - - - - - - - - - -
UNIT V V V nA GHz pF pF pF dB dB dB dB dB
open collector; IE = 10 A; IC = 0 open emitter; VCB = 5 V; IE = 0 IC = 15 mA; VCE = 5 V
IC = 15 mA; VCE = 8 V; f = 500 MHz; - Tamb = 25 C IE = ie = 0; VCE = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C - - - - - - - -
F
noise figure
s = opt; IC = 5 mA; VCE = 8 V; f = 1 GHz s = opt; IC = 15 mA; VCE = 8 V; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; f = 2 GHz
Note
s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB. 2) ( 1 - s 2 ( 1 - s 11 22 )
August 1995
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W BFG67W/X; BFG67W/XR
MBB301
handbook, halfpage
120
handbook, halfpage
1
MLB984
C re (pF)
h FE
0.8
80 0.6
0.4 40 0.2
0 0 20 40 I C (mA) 60
0 0 4 8 12 16 V CB (V)
VCE = 5 V.
IC = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Feedback capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
10
MLB985
fT
(GHz) 8
6
4
2
0 0 10 20 30 I C (mA) 40
f = 2 GHz; VCE = 8 V; Tamb = 25 C.
Fig.6
Transition frequency as a function of collector current; typical values.
August 1995
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W BFG67W/X; BFG67W/XR
handbook, halfpage
30
MLB986
handbook, halfpage
50
MLB987
gain (dB)
gain (dB) 20 MSG G UM G max
40
G UM
30
MSG
20 10 10 G max
0
0
10
20 I C (mA)
30
0 10 102 103 f (MHz) 104
f = 1 GHz; VCE = 8 V.
IC = 5 mA; VCE = 8 V.
Fig.7
Gain as a function of collector current; typical values.
Fig.8
Gain as a function of frequency; typical values.
handbook, halfpage
50
MLB988
gain (dB)
handbook, halfpage
50
MLB989
gain (dB)
40
G UM
40
G UM MSG
MSG 30 30
20 G max
20
10
10
G max
0 10 102 103 f (MHz) 104
0 10 102 103 f (MHz) 104
IC = 15 mA; VCE = 8 V.
IC = 30 mA; VCE = 8 V.
Fig.9
Gain as a function of frequency; typical values.
Fig.10 Gain as a function of frequency; typical values.
August 1995
6
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W BFG67W/X; BFG67W/XR
handbook, halfpage
4
MBB308
F (dB) 3
f = 2 GHz
handbook, halfpage
4
MBB309
F (dB) 3
I C = 30 mA
1 GHz 900 MHz 2 500 MHz
15 mA 5 mA 2
1
1
0 1 10 I C (mA) 100
0 10 2
10 3
f (MHz)
10 4
VCE = 8 V.
VCE = 8 V.
Fig.11 Minimum noise figure as a function of collector current; typical values.
Fig.12 Minimum noise figure as a function of frequency; typical values.
August 1995
7
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W BFG67W/X; BFG67W/XR
90 o
handbook, full pagewidth
stability circle
1.0 45 o 0.8 0.6 0.4 0.2 5 0o 0
1 135 o 0.5 2
0.2 unstable region 180 o 0
F min = 0.95 dB opt 0.2 0.5 1 2
5
0.2
F = 1.5 dB F = 2 dB F = 3 dB 0.5
5
135 o 1
2
45 o
MLB990
1.0
f = 500 MHz; VCE = 8 V; IC = 5 mA; Zo = 50 .
90 o
Fig.13 Common emitter noise figure circles; typical values.
stability circle
handbook, full pagewidth
90 o 1.0 1
135 o
0.5
2
45 o
0.8 0.6
F min = 1.30 dB 0.2 opt 0.2 0.5 1 2 5 5
0.4 0.2 0o 0
180 o unstable region
0
F = 2 dB 0.2 F = 3 dB F = 4 dB 0.5 135 o 1
MLB991
5
2
45 o 1.0
f = 1 GHz; VCE = 8 V; IC = 5 mA; Zo = 50 .
90 o
Fig.14 Common emitter noise figure circles; typical values.
August 1995
8
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W BFG67W/X; BFG67W/XR
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 F = 4 dB F = 3 dB F min = 2.20 dB opt 180 o 0 0.2 0.5 1 2 5 0o 2 F = 5 dB 45 o 0.8 0.6 0.4 0.2 0
0.2
5
G max = 10.4 dB G = 10 dB 0.2 G = 9 dB 5
0.5 135 o 1
2
45 o
MLB992
1.0
90 o f = 2 GHz; VCE = 8 V; IC = 5 mA; Zo = 50 .
Fig.15 Common emitter noise figure circles; typical values.
August 1995
9
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W BFG67W/X; BFG67W/XR
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0
0.2
3 GHz
5
40 MHz 0.2 5
0.5 135 o 1
2
45 o
MLB993
1.0
90 o VCE = 8 V; IC = 15 mA; Zo = 50 .
Fig.16 Common emitter input reflection coefficient (s11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz 180 o 3 GHz 50 40 30 20 10 0o
135 o
45 o
90 o VCE = 8 V; IC = 15 mA.
MLB994
Fig.17 Common emitter forward transmission coefficient (s21); typical values. August 1995 10
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W BFG67W/X; BFG67W/XR
90 o
handbook, full pagewidth
3 GHz 135 o 45 o
180 o 0.25
40 MHz 0.20 0.15 0.10 0.05
0o
135 o
45 o
90 o VCE = 8 V; IC = 15 mA.
MLB995
Fig.18 Common emitter reverse transmission coefficient (s12); typical values.
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0
0.2
5
40 MHz 0.2 3 GHz 5
0.5 135 o 1
2
45 o
MLB996
1.0
90 o VCE = 8 V; IC = 15 mA; Zo = 50 .
Fig.19 Common emitter output reflection coefficient (s22); typical values. August 1995 11
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
SPICE parameters for the BFG67W crystal SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VALUE 556.4 170.0 0.995 48.03 918.1 10.47 1.479 142.1 0.994 2.555 9.632 438.2 1.089 10.00 1.000 10.00 655.9 2.000 0.000 1.110 3.000 1.137 600.0 0.249 11.97 25.99 1.223 197.3 10.03 515.9 155.8 56.02 130.0 1.877 0.000 - - V mA fA - - - V A aA - A m - eV - pF mV - ps - V mA deg fF mV - - ns F Cbe Ccb Cce L1 L2 L3 LB LE
C be L1 B
handbook, halfpage
BFG67W BFG67W/X; BFG67W/XR
UNIT aA
SEQUENCE No. 36(1) 37(1) 38 Note
PARAMETER VJS MJS FC
VALUE 750.0 0.000 0.870 - -
UNIT mV
1. These parameters have not been extracted, the default values are shown.
C cb
LB B' E' LE C'
L2 C
Cce
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz.
Fig.20 Package equivalent circuit SOT343; SOT343R.
List of components (see Fig.20) DESIGNATION 70 50 115 0.34 0.10 0.25 0.40 0.40 VALUE fF fF fF nH nH nH nH nH UNIT
August 1995
12
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
PACKAGE OUTLINES
BFG67W BFG67W/X; BFG67W/XR
handbook, full pagewidth
0.2 M A
0.2 M B
0.4 0.2
0.1 max A
1.00 max 0.2
4
3
2.2 2.0
1.35 1.15
1
0.7 0.5
2
0.3 0.1 0.25 0.10
1.4 1.2 2.2 1.8
B
MSB374
Dimensions in mm.
Fig.21 SOT343.
handbook, full pagewidth
1.00 max 0.2 M A 0.2 M B 0.4 0.2 0.1 max 0.2 A
3
4
2.2 2.0
1.35 1.15
2
1
0.7 0.5 1.4 1.2 2.2 1.8 B
0.3 0.1 0.25 0.10
MSB367
Dimensions in mm.
Fig.22 SOT343R.
August 1995
13
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG67W BFG67W/X; BFG67W/XR
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1995
14
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
NOTES
BFG67W BFG67W/X; BFG67W/XR
August 1995
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 SCD34 (c) Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
123065/1500/01/pp16 Document order number: Date of release: August 1995 9397 739 20011
Philips Semiconductors

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