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| APT6021BFLL APT6021SFLL 600V 29A 0.210 BFLL D3PAK TO-247 POWER MOS 7 (R) R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 SFLL * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE APT6021BFLL_SFLL D G S All Ratings: TC = 25C unless otherwise specified. UNIT Volts Amps 600 29 116 30 40 400 3.20 -55 to 150 300 29 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.210 250 1000 100 3 5 (VGS = 10V, ID = 14.5A) Ohms A nA Volts 9-2004 050-7068 Rev C Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT6021BFLL_SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 29A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 29A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 29A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 29A, RG = 5 RG = 1.6 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 3470 635 50 80 20 44 10 7 25 4 325 205 500 250 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns C Amps 29 116 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -29A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -29A, di/dt = 100A/s) Reverse Recovery Charge (IS = -29A, di/dt = 100A/s) Peak Recovery Current (IS = -29A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient 250 525 1.5 5.5 13 23 TYP MAX THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.35 , THERMAL IMPEDANCE (C/W) 4 Starting Tj = +25C, L = 3.09mH, RG = 25, Peak IL = 29A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID29A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30 0.25 0.9 0.7 0.20 0.15 0.10 0.05 0 0.5 Note: PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 9-2004 0.3 050-7068 Rev C Z JC 0.1 0.05 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 80 VGS =15 &10V 60 8V 7.5V 7V 20 6.5V 6V APT6021BFLL_SFLL RC MODEL Junction temp. (C) 0.131 Power (watts) 0.180 Case temperature. (C) 0.161F 0.00789F ID, DRAIN CURRENT (AMPERES) 40 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 90 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 V GS 0 5.5V NORMALIZED TO = 10V @ 14.5A 80 70 60 50 40 30 20 10 0 TJ = +125C TJ = +25C TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 1.15 1.10 1.05 1.00 0.95 0.90 VGS=20V VGS=10V 0 30 25 20 15 10 5 0 25 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT ID, DRAIN CURRENT (AMPERES) 1.10 1.05 1.00 0.95 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 = 14.5A = 10V V 2.0 1.5 1.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) GS 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7068 Rev C 9-2004 116 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 10,000 APT6021BFLL_SFLL Ciss 50 C, CAPACITANCE (pF) 1,000 Coss 100S 10 100 Crss 1 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 1mS 10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 = 29A 200 100 12 VDS=120V 8 VDS=300V VDS=480V 4 TJ =+150C TJ =+25C 10 20 40 60 80 100 120 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 70 60 0 0 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60 50 V DD G = 400V R = 5 T = 125C J td(on) and td(off) (ns) 50 40 30 20 10 0 td(off) V DD G L = 100H = 400V 40 tr and tf (ns) R = 5 tf T = 125C J L = 100H 30 tr 20 td(on) 10 0 0 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 10 20 30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1400 V = 400V 0 10 20 1000 = 400V R = 5 DD L = 100H E ON includes diode reverse recovery. Eon SWITCHING ENERGY (J) SWITCHING ENERGY (J) 800 T = 125C J 1200 1000 800 I D J = 29A T = 125C L = 100H E ON includes diode reverse recovery. Eoff 600 Eon 600 400 200 400 Eoff 9-2004 200 050-7068 Rev C 0 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 10 20 30 40 50 10 20 30 40 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 APT6021BFLL_SFLL 10 % Gate Voltage 90% td(on) tr 90% Drain Current T = 125 C J Gate Voltage td(off) 90% Drain Voltage T = 125 C J tf 5% 10 % Switching Energy 5% Drain Voltage 10% Drain Current 0 Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT15DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7068 Rev C Gate Drain Source 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 9-2004 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) |
Price & Availability of APT6021SFLL
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