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| Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package C43C2 C43C2 PNP PLASTIC POWER TRANSISTOR Complementary C42C series General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (VBE =0) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 1 A; IB = 50 mA D.C. current gain IC = 200 mA; VCE = 1 V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-emitter voltage (VBE =0) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) VCES VCEO IC PD Tj VCEsat hFE max. max. max. max. max. max. min. max. 40 30 3 12.5 150 V V A W C 0.5 V 40 120 VCES VCEO VEBO IC max. max. max. max. 40 30 5.0 3.0 V V V A Continental Device India Limited Data Sheet Page 1 of 3 C43C2 Collector current (Peak)* Base current Total power dissipation up to T A = 25C Total power dissipation up to TC = 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case From junction to ambient CHARACTERISTICS T c = 25C unless otherwise specified Collector cutoff current V BE = 0; VCE = Rated VCES Emitter cut-off current IC = 0; VEB = 5 V Breakdown sus. voltage IC = 100 mA; I B = 0 Saturation voltages IC = 1 A; IB = 50 mA IC = 1 A; I B = 100 mA D.C. current gain IC = 200 mA; VCE = 1 V IC = 1 A; V CE = 1 V Transition frequency IC = 20 mA; V CE = 4 V Collector capacitance V CB = 10 V; I E = 0; f = 1 MHz Switching time Delay time + Rise time IC = 1 A; I B1 = IB2 = 0.1 A Storage time + Fall time V CC = 30 V; tp = 25 sec ICM IB PD PD Tj Tstg Rth j-c Rth j-a max. 5A max. 2A max. 2.1 W max. 12.5 W max. 150 C -65 to +150 C = = 10 C/W 60 C/W ICES IEBO VCEO(sus)* VCEsat* VBEsat* hFE* hFE* fT Ccbo max. max. min. max. max. min. max. min. typ. max. 10 A 100 A 30 V 0.5 V 1.3 V 40 120 20 40 MHz 125 pF td+tr typ. 50 ns ts tf typ. typ. 500 ns 50 ns * Pulsed test: P W = 300 ms; duty cycle = 2%. Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 CDIL is a registered Trademark of |
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