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| FMBA14 Discrete POWER & Signal Technologies FMBA14 C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .1N NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 30 30 10 1.2 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max FMBA14 700 5.6 180 Units mW mW/C C/W (c) 1998 Fairchild Semiconductor Corporation FMBA14 NPN Multi-Chip Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CES ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 100 A, IB = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 100 100 V nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, VCE = 5.0 V 10K 20K 1.5 2.0 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 10 V, f = 100 MHz 200 MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 200 VCE = 5V 150 25 C hFE - TYPICAL PULSED CURRENT GAIN (K) VCESAT- COLLECTOR EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current 1.6 = 1000 1.2 - 40 C 25C 125 C 125 C 0.8 100 - 40 C 50 0 0.001 0.4 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 2 1.6 - 40 C Base Emitter ON Voltage vs Collector Current 2 1.6 1.2 0.8 0.4 0 VCE = 5V = 1000 - 40 C 25 C 125 C 1.2 0.8 0.4 0 25 C 125 C 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 FMBA14 NPN Multi-Chip Darlington Transistor (continued) Typical Characteristics (continued) 100 VCB = 30V BVCER - BREAKDOWN VOLTAGE (V) Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 62.5 62 61.5 61 60.5 60 59.5 0.1 10 1 0.1 0.01 25 50 75 100 T A- AMBIENT TEMPERATURE ( C) 125 1 10 100 1000 RESISTANCE (k ) Input and Output Capacitance vs Reverse Voltage f = 1.0 MHz 20 f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 50 Vce = 5V 40 CAPACITANCE (pF) 10 30 Cib 5 20 Cob 10 2 0.1 1 10 100 0 1 10 20 50 100 150 Vce - COLLECTOR VOLTAGE(V) IC - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 SOT-6 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 |
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