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| InGaAs-APD/Preamp Receiver FEATURES * Data rate up to 2.5Gb/s * -32dBm typ. sensitivity * 30m active area APD chip with GaAs preamplifier * Small co-axial package with single mode fiber FRM5W231KT/LT KT APPLICATIONS * High bit rate long haul optical transmission systems operating at 2.5Gb/s LT DESCRIPTION These APD preamplifiers use an InGaAs APD chip with GaAs IC preamplifier. The KT package is designed for a horizontal PC board mount. The LT package is secured by a vertical flange. Each package is connected with single mode fiber by Nd: YAG welding. The detector preamplifier is DC coupled and has a low electrical output when the APD is illuminated. Edition 1.0 March 1999 1 FRM5W231KT/LT Parameter Storage Temperature Operating Temperature Supply Voltage APD Reverse Voltage APD Reverse Current Symbol Tstg Top Vss VR (Note 1) IR (Note 2) InGaAs-APD/Preamp Receiver ABSOLUTE MAXIMUM RATINGS (Tc=25C, unless otherwise specified) Ratings -40 to +85 -40 to +85 -7 to 0 0 to VB 0.6 Unit C C V V mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25C, =1,310/1,550nm, Vss=-5.2V, unless otherwise specified) Parameter APD Responsivity APD Breakdown Voltage Temperature Coefficient of VB Symbol R15 R13 VB Test Conditions 1,550nm, M=1 1,310nm, M=1 ID=10A Note 3 AC-Coupled, f=100MHz, RL=50, Pin <-20dBm, AC-Coupled, RL=50, M=3 to 15, -3dBm from 1MHz AC-Coupled, RL=50, Average within BW 2.488Gb/s NRZ, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value Tc=-40 to +85C 2.488Gb/s NRZ, M=3, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value Tc=-40 to +85C, M=3 Min. 0.80 0.75 40 0.08 Limits Typ. 0.85 0.85 50 0.12 Max. 65 0.15 Unit A/W A/W V V/C AC Transimpedance Zt 400 600 - Bandwidth BW 1.8 2.0 - GHz Equivalent Input Noise Current Density in - 6.5 -32 8 -31 pA/ Hz dBm Sensitivity Pr -5 -31 - -30 - dBm dBm Maximum Overload Po -7 -5.46 -5.2 40 -4.94 dBm mA V Power Supply Current Power Supply Voltage Iss Vss Note: (1) VB differs from device to device. VB data is attached to each devices. (2) CW condition (3) =dVB/dTC Edition 1.0 March 1999 2 InGaAs-APD/Preamp Receiver Fig. 1 Output Characteristics Tc = 25C Vss=-5.2V 0.6 AC-Coupled RL=50 0.5 100Mb/s Duty 50% Mark density 50% 0.4 0.3 0.2 0.1 0 0.7 FRM5W231KT/LT Fig. 2 Relative Frequency Response Output Voltage Peak to Peak, Vpp(mV) Relative Response (3dB/div) M=15 M=10 M=5 Tc = 25C Vss=-5.2V AC-Coupled RL=50 Pin=-30dBm = 1,310/1,550nm 0 1.5 3.0 Zt ~ 600 Frequency, f (GHz) 0 0.1 0.2 0.3 0.4 0.5 0.6 Fig.4 Eye Diagram with a 1,550nm, 2.5Gb/s NRZ, 223-1 PRBS incident signal Input optical wave form with Bessel filter Average Photocurrent, Ip.ave (mA) Fig.3 Equivalent Input Noise Current Density Equivalent Input Noise Current Density, in (pA/sqr. Hz) 10 5 Tc = 25C Vss=-5.2V AC-Coupled RL=50 0 0 1.0 Frequency, f (GHz) 2.0 Equivalent output wave form at Pin=-32dBm, Tc=25C, M=optimum 100ps/div Edition 1.0 March 1999 3 FRM5W231KT/LT Fig.5 Bit Error Rate =1,310/1,550nm 2.5Gb/s, NRZ Vss=-5.2V M=Optimum Duty 50% Mark Density 50% InGaAs-APD/Preamp Receiver 10-4 Bit Error Rate 10-6 Tc=+25C 10-8 -40C 10-10 10-12 -40 +85C -35 -30 -25 Received Optical Power (dBm) "KT" PACKAGE GND UNIT: mm 2-C1.5 VR VSS 14.00.15 17.00.2 8.40.2 O0.90.1 4-O0.450.05 OUT O6.0 MAX P.C.D. 2.00.2 P.C.D. 4.00.2 2.50.1 4.4 MAX 10.0 MIN 32.0 MAX O7.2 MAX GND VR 2.00.1 4.20.2 1000 MIN VSS 8.40.2 OUT "LT" PACKAGE GND VR VSS VR UNIT: mm VSS 14.00.15 17.00.2 O0.9 P.C.D. 2.00.2 4-O0.450.05 O6.0 MAX P.C.D. 4.00.2 OUT 7.6 MAX 1.00.1 2.50.1 O7.2 MAX OUT GND 10.0 MIN 32.0 MAX 1000 MIN Edition 1.0 March 1999 4 InGaAs-APD/Preamp Receiver For further information please contact: FRM5W231KT/LT FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FME, QDD Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 Edition 1.0 March 1999 5 |
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