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| Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXTR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 m N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Maximum Ratings 100 100 20 30 V V V V A A A A mJ J V/ns W C C C V~ Nm/lb g ISOPLUS 247TM E153432 TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 133 75 400 60 100 4 10 350 -55 ... +175 175 -55 ... +150 G = Gate S = Source D = Drain Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Avalanche voltage rated Fast recovery intrinsic diode Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control 50/60 Hz, RMS, 1 minute Mounting Force 2500 20..120/4.6..20 5 Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V VGS = 10 V, ID = 60 A VGS = 15 V, ID = 400A TJ = 150C TJ = 175C Characteristic Values Min. Typ. Max. 100 3.0 5.0 100 25 250 1000 8.0 5.5 V V nA A A A m m Advantages Easy assembly Space savings High power density RDS(on) (c) 2005 IXYS All rights reserved DS99365(06/05) IXTR 200N10P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 60 97 7600 VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 860 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 35 150 90 240 VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A 50 135 S pF pF pF ns ns ns ns nC nC nC .42 K/W 0.15 K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 ISOPLUS 247 OUTLINE gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 100 A, Note 1 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25 A, dI/dt = 100 A/s Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 200 400 1.5 100 A A V 140 ns Notes: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXTR 200N10P Fig. 1. Output Characteristics @ 25C 200 175 150 VGS = 10V 9V 350 VGS = 10V 300 250 8V 9V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 125 100 75 50 25 0 0 0.2 0.4 0.6 0.8 1 I D - Amperes 200 150 8V 7V 7V 100 6V 50 0 6V 1.2 1.4 1.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 V D S - Volts Fig. 3. Output Characteristics @ 150C 200 175 150 VGS = 10V 9V 8V 2.4 2.2 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2 1.8 I D = 200A 1.6 1.4 1.2 1 0.8 0.6 I D = 100A I D - Amperes 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 6V 7V 5V -50 -25 0 25 50 75 100 125 150 175 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 2.4 2.2 80 TJ = 175 C 70 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 90 External Lead Current limit R D S ( o n ) - Normalized 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 50 100 150 200 VGS = 15V I D - Amperes 350 60 50 40 30 20 VGS = 10V TJ = 25 C 250 300 10 0 I D - Amperes -50 -25 0 25 50 75 100 125 150 175 TC - Degrees Centigrade (c) 2005 IXYS All rights reserved IXTR 200N10P Fig. 7. Input Adm ittance 300 140 120 100 TJ = -40 C 80 60 40 20 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 50 100 150 200 250 300 350 25C 150 C Fig. 8. Transconductance 250 I D - Amperes 200 150 TJ = 150 C 25C 50 -40C 100 0 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 350 300 8 250 7 10 9 VDS = 50V I D = 100A I G = 10mA g f s - Siemens I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 150 C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 200 150 100 50 0 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 225 250 V S D - Volts Fig. 11. Capacitance 1000 100,000 f = 1MHz Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area TJ = 175C TC = 25 C R DS(on) Limit Capacitance - picoFarads 10,000 C iss I D - Amperes 100s C oss 100 1ms 1,000 C rss 10ms DC 100 0 5 10 15 20 25 30 35 40 10 1 10 100 1000 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. V D S - Volts IXTR 200N10P Fig. 1 3 . M a x im um Tr a ns ie nt The r m a l Re s is ta nc e 1.00 R( t h ) J C - C / W 0.10 0.01 1 10 100 1000 Pu ls e W idth - millis ec on ds (c) 2005 IXYS All rights reserved |
Price & Availability of IXTR200N10P
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