|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
KSA916 KSA916 Audio Power Amplifier * Driver Stage Amplifier * Complement to KSC2316 1 TO-92L 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -120 -120 -5 -800 900 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -1mA IE=0 IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -120V, IE=0 VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA IC= -500mA, IB= -50mA VCE= -5V, IC= -100mA VCB= -10V, IE=0, f=1MHz 120 40 60 80 Min. -120 -120 -5 -0.1 240 -1 V MHz pF Typ. Max. Units V V V A hFE Classification Classification hFE O 80 ~ 160 Y 120 ~ 240 (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA916 Typical Characteristics -1000 1000 VCE = -5V IC[mA], COLLECTOR CURRENT -800 IB = -15mA IB = -10mA IB = -7mA -600 IB = -5mA -400 hFE, DC CURRENT GAIN -10 100 IB = -4mA IB = -3mA IB = -2mA IB = -1mA -200 0 0 -2 -4 -6 IB = 0 -8 10 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -1000 VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB IC[mA], COLLECTOR CURRENT -1 -100 -0.1 V CE(sat) -10 -0.01 -0.1 -1 -1 -10 -100 -1000 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 4.0 Single pulse 3.5 1m s s 10m s m 100 IC[mA], COLLECTOR CURRENT PC[W], POWER DISSIPATION -1000 3.0 2.5 TC -100 DC O = per 25 a t ing 2.0 1.5 TC 1.0 Ta 0.5 -10 -1 -1 -1 -10 -100 0.0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE Ta[ C], AMBIENT TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA916 Package Demensions TO-92L 4.90 0.20 8.00 0.20 1.70 0.20 1.00 0.10 0.70MAX. 0.80 0.10 1.00MAX. 13.50 0.40 0.50 0.10 1.27TYP [1.27 0.20] 2.54 TYP 0.45 0.10 1.45 0.20 3.90 0.20 3.90 0.20 0.45 0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
Price & Availability of KSA916 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |