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| polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 220.0 Watts Push - Pull Package Style LR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 440 Watts Junction to Case Thermal Resistance o 0.44 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 23.0 A RF CHARACTERISTICS ( 220.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 11 50 5:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = 0.80 A, Vds = 28.0 V, F = Idq = 0.80 A, Vds = 28.0 V, F = 350 MHz 350 MHz VSWR Idq = 0.80 A, Vds = 28.0 V, F = 350 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 2 4.8 0.20 30.00 150.0 7.5 100.0 MIN 65 1.0 1 5 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.25 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 13.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 02/27/2006 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com LR501 POUT VS PIN GRAPH L R 5 0 1 F = 3 5 0 M H z ; V d s = 2 8 V d c , Id q = 0 . 8 A CAPACITANCE VS VOLTAGE L 5 1 D IE 17 16 1000 C A P A C IT A N C E 250 200 Ciss 100 Pout 150 100 50 E ffic i e n c y @ 2 0 0 W = 5 0 % 15 14 Gain 13 12 11 10 1 0 5 10 Coss Crss 0 0 4 8 12 P i n i n W a tts 16 20 10 15 20 V D S IN V O L T S 25 30 IV CURVE L5 1 DIE 40 35 30 ID IN AMPS 25 20 15 10 5 0 0 2 vg=2v vg=10v 4 6 8 10 12 VDS IN VOLTS Vg=4v vg=12v 14 Vg=6v Vg=14V 16 18 20 ID & GM VS VGS 100 L5 1 D IE ID , G M v s V G lg Id 10 G 1 0 2 4 gM vg=8v Vg=16V V g s in V o lts 6 8 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 02/27/2006 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com |
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