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| Switching Diodes MA3V177 Silicon epitaxial planar type For switching circuits I Features * Small terminal capacitance, Ct * Can be connected in series 4.0 0.2 3.0 0.2 Unit : mm I Absolute Maximum Ratings Ta = 25C 0.45 - 0.1 + 0.2 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 40 40 100 200 150 -55 to +150 Unit V V mA mA C C 1 2 3 1.27 1.27 2.54 0.15 1 : Anode 2 : Cathode Anode 3 : Cathode New S-Type Package Internal Connection 1 2 3 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Symbol IR VF VR Ct1*1 Ct2*2 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 3 and 2 *2 : Between pins 2 and 1 VR = 40 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz 40 5.5 3.0 Conditions Min Typ Max 0.1 1.2 Unit A V V pF 2.0 0.2 marking 0.7 0.1 15.6 0.5 1 MA3V177 IF V F 103 Ta = 25C 103 Switching Diodes IF V F Ta = 25C IR V R 102 Ta = 25C Forward current IF (mA) Forward current IF (mA) 10 123 10 123 Reverse current IR (A) 102 102 10 1 123 10-1 D1 (3-2) 1 1 10-1 0 0.4 0.8 1.2 1.6 2.0 10-1 0 0.4 0.8 1.2 1.6 2.0 10-2 D2 (2-1) 0 10 20 30 40 50 Forward voltage VF (V) Forward voltage VF (V) Reverse voltage VR (V) IR VR 103 Ta = 125C VF Ta 1.2 1.2 VF Ta 1.0 1.0 Reverse current IR (A) D2 (2-1) Forward voltage VF (V) Forward voltage VF (V) 102 D1 (3-2) 0.8 IF = 10 mA 3 mA 1 mA 0.1 mA 0.8 IF = 10 mA 3 mA 1 mA 0.1 mA 10 0.6 0.6 123 1 0.4 0.4 0.2 123 10-1 0 10 20 30 40 50 0.2 123 0 0 40 80 120 160 -40 0 40 80 120 160 0 -40 Reverse voltage VR (V) Ambient temperature Ta (C) Ambient temperature Ta (C) IR Ta 100 Ct VR 10 f = 1 MHz Ta = 25C 5 D2 (2-1) Terminal capacitance Ct (pF) Reverse current IR (A) 3 2 D1 (3-2) 1 D2 (2-1) 0.5 0.3 0.2 1 2 3 10 1 123 D1 (3-2) 0.1 0.1 0 20 40 60 80 100 120 140 160 0 4 8 12 16 20 24 28 32 36 40 Ambient temperature Ta (C) Reverse voltage VR (V) 2 |
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