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| FORMOSA MICROSEMI MM914 High-speed switching diode Features 1. 2. 3. Small surface mounting type High reliability High speed (t rr= 4 ns) Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Repetitive peak reverse voltage DC blocking voltage Non repetitive peak forward surge current Forward current Average rectified current Power dissipation Junction temperature Storage temperature range Half wave rectification with resistive load and f>50 MHz PV Tj Tstg 500 175 -65~+175 mW ? ? t=1s t=1 s Test Conditions Symbol VRRM VR IFSM IFSM IF IFAV Value 75 75 1 4 300 200 Unit V V A mA mA mA Maximum Thermal Resistance Tj=25? Parameter Junction ambient Test Conditions on PC board 50mmx 50mmx 1.6mm Symbol RthJ A Value 500 Unit K/W FORMOSA MS 1 FORMOSA MICROSEMI MM914 Electrical Characteristics Tj=25? Parameter Forward voltage Breakdown voltage Peak reverse current IF =10mA IR =100 A VR =75V VR =20V, Tj=150? VR =20V Diode capacitance Reverse recovery time VR =0, f=1MHz IF =10mA, VR =6V, i R =0.1x IR , RL=100O Test Conditions Symbol VF VR IR IR IR CD trr 100 5 50 25 4 4 Min Typ Max 1 Unit V V A A nA pF ns Dimensions in mm Cathode band Glass Case Mini Melf / SOD 80 JEDEC DO 213 AA FORMOSA MS 2 |
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