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Moderate Power High fT NPN Silicon Transistor
Features *High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz *High Gain Bandwidth Product *8-9 GHz fT *High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz *Low Noise Figure - 1.5 dB @ 1.5 GHz Description The MP4T856 series of moderate power NPN transistors prov ides low noise at 5-10 v olts operating v oltage. These transistors are designed to optimize gain at moderate collector currents (20 - 60 mA). They are useful as moderate power (+23-24 dBm) low noise amplifiers at 0.5-2 GHz or as low noise VCO transistors from 100 MHz to 5.0 GHz. These inexpensiv e transistors are av ailable in the SOT23 (MP4T85633), the SOT-143 (MP4T85639), and the Micro-X (MP4T85635) packages. They are also av ailable as chips (MP4T85600) for hybrid circuits. The plastic packages SOT-23 and SOT-143 are normally supplied on tape and reel. Package Outline
MP4T856 Series
SOT-23
SOT-143
Chip
Absolute Maximum Ratings1
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Chip or Ceramic Package Plastic Package Storage Temperature Chip or Ceramic Package Plastic Package Power Dissipation (die)
1. See power derating curves.
Absolute Maximum 20 V 12 V 3.0 V 100 mA +200C +150C -65C to +200C -65C to +200C 1200 mW1
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
MP4T856 Series Electrical Specifications @ +25 C
Symbol
fT |S21E|2 NF GA P1dB RTH(J-A) RTH(J-C)
MP4T856 Series
Parameters
Gain Bandwidth Product Insertion Power Gain Noise Figure Associated Gain Output Power at 1 dB Compression Thermal Resistance Thermal Resistance
Test Conditions
VCE=8V, IC=30mA VCE=8V, IC=20MA, f=1GHz VCE=8V, IC=10mA, f=1GHz VCE=8V, IC=10mA, f=1GHz VCE=8V, IC=40mA, f=1GHz, f=2GHz Junction/Ambient (Free Air) Junction/Case
Units
GHz dB dB dB dBm C/W C/W
MP4T85600 Chips
7.0 typ. 13.5 min. 1.6 max. 16 typ. 16 typ. 10 typ. 60 max.1
MP4T85633 SOT-23
7.0 typ. 12 min. 1.7 max. 15 typ. 13 typ. 10 typ. 600 max. 200 typ.
MP4T85635 Micro-X
7.0 typ. 13.0 min. 1.6 max. 16 typ. 16 typ. 10 typ. 550 max 200 typ.
MP4T85639 SOT-143
7.0 typ. 12 min. 1.7 max. 15 typ. 13 typ. 10 typ. 600 max. 200 typ.
1 See power derating curves.
Electrical Specifications @ +25 C
Symbol I CBO I EBO hFE COB Parameters Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector-Base Junction Capacitance Test Conditions VCB = 8V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCB = 8 V, f = 1 MHz Units A A pF Min. 20 Typ. 100 0.62 Max. 1.0 1 250 0.75
MP4T85635 Typical Scattering Parameters in the MIcro-X Package
VCE = 8 Volts, IC = 10 mA
Frequency (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 4000 5000 6000 S11E Mag. 0.581 0.516 0.496 0.487 0.483 0.481 0.479 0.478 0.478 0.476 0.475 0.475 0.474 0.473 0.472 0.472 0.476 0.484 Angle -97.9 -151.1 177.1 153.4 133.2 114.9 97.7 81.2 65.1 49.4 33.9 18.4 3.9 -12.2 -27.4 -103.3 -176.5 104.4 Mag. 16.95 10.72 7.59 5.84 4.74 3.99 3.46 3.06 2.74 2.49 2.29 2.12 1.98 1.86 1.76 1.39 1.17 1.03 S21E Angle 117.1 83.5 60.3 40.7 22.7 5.6 -11.0 -27.3 -43.4 -59.3 -75.0 -90.6 -106.1 -121.5 -136.7 148.1 74.8 3.1 Mag. 0.033 0.045 0.054 0.064 0.074 0.085 0.097 0.109 0.121 0.133 0.145 0.158 0.170 0.183 0.197 0.267 0.340 0.415 S12E Angle 44.9 27.8 17.9 8.6 1.0 11.4 22.2 33.6 45.4 57.3 69.5 82.0 94.7 107.3 120.1 174.4 107.1 38.2 Mag 0.685 0.481 0.396 0.355 0.334 0.324 0.317 0.311 0.311 0.315 0.314 0.311 0.317 0.324 0.323 0.336 0.367 0.375 S22E Angle -46.4 -65.0 -79.0 -91.6 -105.0 -118.0 -132.0 -147.0 -162.0 -177.0 168.4 152.6 136.0 121.0 107.0 28.5 -49.0 -126.0
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
MP4T85635 Typical Scattering Parameters in the MIcro-X Package
VCE = 8 Volts, IC = 20 mA Frequency S11E (MHz) Mag. Angle 200 0.469 -124.6 400 0.456 -170.4 600 0.453 163.3 800 0.452 142.9 1000 0.451 124.9 1200 0.451 108.1 1400 0.449 91.9 1600 0.448 76.2 1800 0.450 60.8 2000 0.448 45.5 2200 0.448 30.6 2400 0.448 15.7 2600 0.446 1.5 2800 0.445 -14.0 3000 0.442 -29.1 4000 0.443 -104.0 5000 0.442 -177.9 6000 0.456 105.2 Mag. 21.56 12.34 8.50 6.48 5.23 4.40 3.80 3.35 3.01 2.73 2.51 2.32 2.17 2.04 1.92 1.52 1.29 1.13 S21E Angle 107.4 77.1 56.0 37.7 20.5 3.9 -12.3 -28.2 -44.0 -59.6 -75.2 -90.6 -105.9 -121.1 -136.3 148.8 75.3 3.2 Mag. 0.026 0.037 0.050 0.062 0.075 0.089 0.102 0.116 0.130 0.143 0.157 0.170 0.184 0.198 0.212 0.281 0.351 0.419 S12E Angle 47.0 36.6 28.2 18.5 7.5 4.1 16.2 28.8 41.5 54.3 67.3 80.4 93.6 106.9 120.1 172.7 104.5 35.6
MP4T856 Series
Mag 0.546 0.363 0.298 0.269 0.254 0.247 0.244 0.242 0.243 0.246 0.246 0.246 0.251 0.258 0.260 0.275 0.307 0.318
S22E Angle -53.6 -69.8 -81.1 -92.9 -105.6 -119.2 -133.0 -147.8 -163.0 -177.5 167.9 152.4 136.5 121.9 107.2 29.1 -48.5 -126.1
MP4T85635 Typical Scattering Parameters in the MIcro-X Package
VCE = 8 Volts, IC = 40 mA Frequency S11E (MHz) Mag. Angle 200 0.426 -147.7 400 0.438 175.6 600 0.441 153.3 800 0.442 134.9 1000 0.442 118.0 1200 0.442 101.9 1400 0.441 86.1 1600 0.441 70.6 1800 0.443 55.3 2000 0.443 40.2 2200 0.443 25.3 2400 0.443 10.6 2600 0.442 -4.7 2800 0.441 -19.2 3000 0.440 -34.3 4000 0.446 -109.5 5000 0.447 174.0 6000 0.466 100.3 Mag. 23.88 12.94 8.80 6.67 5.38 4.51 3.90 3.43 3.08 2.79 2.56 2.37 2.21 2.07 1.95 1.54 1.30 1.13 S21E Angle 99.9 72.7 52.9 35.3 18.5 2.2 -13.8 -29.6 -45.3 -60.8 -76.3 -91.6 -106.8 -122.0 -137.2 148.1 74.7 2.9 Mag. 0.021 0.034 0.048 0.062 0.076 0.090 0.105 0.119 0.133 0.147 0.161 0.174 0.188 0.202 0.216 0.283 0.351 0.414 S12E Angle 51.7 43.8 34.7 23.9 11.9 0.5 13.4 26.4 39.7 52.9 66.2 79.6 93.1 106.5 120.0 172.3 104.0 35.3 Mag 0.443 0.296 0.250 0.230 0.222 0.219 0.218 0.218 0.221 0.225 0.226 0.227 0.233 0.242 0.244 0.264 0.297 0.307 S22E Angle -56.7 -68.7 -79.0 -90.5 -103.3 -117.1 -131.1 -146.0 -161.3 -175.9 169.6 154.1 138.3 123.8 109.4 32.3 -43.8 -119.7
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
MP4T85639 Typical Scattering Parameters in the SOT-143 Package
VCE = 3 Volts, IC = 20 mA Frequency S11E (MHz) Mag. Angle 200 0.471 -118.4 400 0.457 -152.6 600 0.458 -168.7 800 0.461 -178.9 1000 0.466 173.0 1200 0.471 166.0 1400 0.476 160.2 1600 0.480 155.0 1800 0.485 150.1 2000 0.491 144.8 2200 0.488 141.5 2400 0.496 137.1 2600 0.499 132.9 2800 0.510 129.4 3000 0.513 125.8 Mag. 19.14 10.70 7.33 5.57 4.48 3.76 3.24 2.86 2.56 2.32 2.12 1.97 1.83 1.71 1.62 S21E Angle 115.5 97.7 88.2 81.4 75.7 70.3 65.5 61.1 56.7 52.3 48.8 44.7 40.8 37.3 34.0 Mag. 0.034 0.048 0.064 0.079 0.095 0.110 0.128 0.144 0.158 0.172 0.190 0.207 0.220 0.233 0.249 S12E Angle 56.7 57.2 60.7 61.1 62.3 60.7 60.1 59.0 56.9 56.3 55.7 53.2 50.6 48.8 46.8
MP4T856 Series
Mag 0.492 0.297 0.219 0.183 0.168 0.158 0.156 0.154 0.157 0.157 0.167 0.172 0.180 0.183 0.184
S22E Angle -54.8 -66.2 -71.4 -75.3 -80.1 -85.0 -89.3 -94.0 -98.3 -101.4 -104.8 -108.7 -111.6 -115.9 -118.5
MP4T85639 Typical Scattering Parameters in the SOT-143 Package
VCE = 3 Volts, IC = 40 mA Frequency S11E (MHz) Mag. Angle 200 0.447 -140.1 400 0.460 -165.5 600 0.467 -177.5 800 0.473 174.3 1000 0.478 167.7 1200 0.484 161.8 1400 0.490 156.6 1600 0.492 151.9 1800 0.499 147.4 2000 0.504 142.4 2200 0.501 139.3 2400 0.509 135.3 2600 0.511 131.0 2800 0.521 127.3 3000 0.527 124.2 Mag. 20.11 10.77 7.30 5.53 4.44 3.72 3.21 2.83 2.53 2.30 2.10 1.94 1.81 1.70 1.60 S21E Angle 108.5 93.6 85.3 79.2 73.9 68.8 64.1 59.8 55.6 51.3 47.9 43.8 39.9 36.4 33.1 Mag. 0.028 0.043 0.062 0.079 0.096 0.112 0.128 0.148 0.163 0.177 0.195 0.210 0.225 0.238 0.255 S12E Angle 59.4 65.0 67.1 66.6 66.4 64.5 63.7 61.9 59.3 57.6 57.0 54.7 51.5 49.9 47.5 Mag 0.376 0.221 0.166 0.141 0.130 0.127 0.127 0.128 0.134 0.138 0.151 0.151 0.160 0.164 0.170 S22E Angle -60.8 -69.4 -74.5 -78.2 -84.2 -89.1 -93.9 -98.7 -103.4 -106.8 -109.4 -113.5 -115.6 -119.3 -123.7
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
MP4T85639 Typical Scattering Parameters in the SOT-143 Pacakge
VCE = 8 Volts, IC = 20 mA Frequency S11E (MHz) Mag. Angle 200 0.500 -98.3 400 0.423 -137.3 600 0.406 -157.4 800 0.404 -170.3 1000 0.406 -179.7 1200 0.409 172.1 1400 0.416 165.6 1600 0.418 159.7 1800 0.425 154.5 2000 0.431 149.0 2200 0.431 145.3 2400 0.439 140.9 2600 0.446 136.5 2800 0.457 132.4 3000 0.463 129.3 Mag. 20.35 11.71 8.09 6.17 4.97 4.17 3.59 3.16 2.83 2.57 2.33 2.16 2.01 1.88 1.77 S21E Angle 119.5 100.4 90.4 83.2 77.3 71.7 66.8 62.2 57.9 53.2 49.7 45.6 41.7 38.0 34.5 Mag. 0.030 0.042 0.055 0.068 0.081 0.096 0.109 0.123 0.134 0.144 0.163 0.175 0.188 0.199 0.212 S12E Angle 59.3 57.3 61.6 62.8 62.4 61.1 61.5 60.5 58.3 58.4 57.8 56.8 54.2 52.3 50.7
MP4T856 Series
Mag 0.580 0.394 0.322 0.290 0.272 0.264 0.257 0.254 0.255 0.254 0.264 0.265 0.268 0.273 0.271
S22E Angle -38.8 -43.0 -42.7 -43.0 -45.2 -47.8 -50.9 -54.1 -57.9 -61.7 -65.6 -69.2 -72.9 -76.4 -80.0
MP4T85639 Typical Scattering Parameters in the SOT-143 Package
VCE = 8 Volts, IC = 40 mA Frequency S11E (MHz) Mag. Angle 200 0.455 -116.2 400 0.414 -150.6 600 0.410 -166.9 800 0.412 -177.6 1000 0.417 174.6 1200 0.422 167.4 1400 0.429 161.8 1600 0.432 156.4 1800 0.439 151.7 2000 0.447 146.4 2200 0.444 143.0 2400 0.455 138.8 2600 0.460 134.5 2800 0.472 131.0 3000 0.479 127.7 Mag. 21.21 11.59 7.90 5.98 4.82 4.04 3.48 3.06 2.74 2.48 2.25 2.09 1.94 1.82 1.70 S21E Angle 112.3 95.8 87.0 80.4 74.9 69.6 64.8 60.4 56.1 51.5 48.0 43.8 39.8 36.1 32.7 Mag. 0.026 0.038 0.052 0.66 0.079 0.092 0.109 0.123 0.136 0.146 0.163 0.177 0.188 0.199 0.211 S12E Angle 58.5 61.8 64.9 64.4 67.4 65.2 64.3 63.1 60.6 60.1 59.1 57.4 54.8 52.4 51.4 Mag 0.492 0.350 0.303 0.282 0.268 0.265 0.263 0.260 0.260 0.260 0.272 0.272 0.276 0.282 0.279 S22E Angle -38.2 -37.6 -36.0 -36.7 -39.3 -42.4 -45.7 -49.7 -54.2 -58.0 -62.0 -66.1 -69.7 -73.7 -77.3
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
Typical Performance Curves
MP4T856 SERIES POWER DISSIPATION
1400 POWER DISSIPATION (mW) 1200 1000 800 600 400 200 0 0
MP4T85635 (MICRO-X) FREE AIR MP4T85635 (MICRO-X) INFINITE HEAT SINK MP4T86500 (CHIP) ON HEAT SINK
300 250
MP4T856 Series
MP4T856 SERIES POWER DISSIPATION
M P 4 T 8 5 6 3 3 , 39 (O D S - 1 1 3 9 , 23 M icro-X ) INFINITE HEAT SINK
POWER DISSIPATION (mW)
200
150
100
50
M P 4 T 8 5 6 3 3 , 3 9 ( O D S - 1 1 3 9 , 3 5 M icro-X ) F R E E A IR
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (C)
A M B IE N T T E M P E R A T U R E (C )
MP4T85635 NOMINAL GAIN vs FREQUENCY at VCE - 8 VOLTS and IC = 20mA
30 25 GAIN (dB) 20 15 10 5 0 100 1000 FREQUENCY (MHz) 10000 |S21E |2 5 0 MAG GTU (MAX) GAIN (dB) 30 25 20 15 10
MP4T85635 NOMINAL GAIN vs FREQUENCY at VCE - 8 VOLTS and IC = 40mA
GU (MAX)
GA (MAX) |S21E |2
100
1000 FREQUENCY (MHz)
10000
MP4T85635 NOMINAL GAIN vs COLLECTOR CURRENT at F = 1GHz and VCE = 8 VOLTS
18 17 16 15 GAIN (dB) 14 13 12 11 10 9 8 1 10 COLLECTOR CURRENT (mA) 100 GTU (MAX) |S21E |2 25 MAG GAIN (dB) 20 15 10 5 0 1
MP4T85600 NOMINAL GAIN vs COLLECTOR CURRENT at F = 1GHz and VCE = 8 VOLTS
GU (MAX)
|S21E |2
10 COLLECTOR CURRENT (mA)
100
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
6
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
Typical Performance Curves (Cont' d)
MP4T85600 CAPACITANCE vs COLLECTOR-BASE VOLTAGE
1 0.9 0.8 0.7 Cob (pf) 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 COLLECTOR-BASE VOLTAGE (Volts) 100 0 0 10 20 30 40 DC CURRENT GAIN 140 120 100 80 60 40 20
MP4T856 Series
NOMINAL DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 8 VOLTS
50
60
70
80
COLLECTOR CURRENT (mA)
NOMINAL NOISE FIGURE and ASSOCIATED GAIN at F = 1 GHz COLLECTOR CURRENT at VCE = 8 VOLTS (MP4T85635)
25
NOISE FIGURE (dB) ASSOCIATED GAIN (dB)
NOMINAL POWER OUTPUT at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at F=1 and 2 GHz and VCE = 8 VOLTS (MP4T85635)
18 16 POUT - 1dB (dBm) 14 12 10 8 6 4 2 0 1 10 COLLECTOR CURRENT (mA) 100 f = 1 GHz
ASSOCIATED GAIN 20 15 10 5 0 1 10 COLLECTOR CURRENT (mA) 100 NOISE FIGURE
Case Styles
Chip (MP4T85600)
A
Base
MP4T85600 DIM. INCHES (Nominal) A 0.013 B 0.013 C 0.0012 D 0.0045
MM (Nominal) 0.35 0.35 0.03 0.11
B D Thickness Emitter
C 2 PLCS
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
7
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
Case Styles (Cont' d)
MP4T85633 SOT-23 (MP4T85633) DIM. A B C D E F G H J K L DIM. M N INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 GRADIENT 10max. 1 2. . . 30
MP4T856 Series
F D Collector M G B K A N
MILLIMETERS MIN. MAX. 1.12 0.10 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60
L H Base J Emitter C E
NOTE: 1. Applicable on all sides
Micro-X (MP4T85635) Case Style 1139
Emitter F 4 PLCS. E H
MP4T85635 DIM. A B C D E F G H INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45 MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.046 0.56 3.81 0.08 0.15 45
Collector B
Base
Emitter
A
C
G
D
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
8
Tel (408) 432-1480
Fax (408)) 432-3440
Moderate Power High fT NPN Silicon Transistor
MP4T856 Series
Case Styles (Cont' d)
SOT-143 (MP4T85639)
MP4T85639 DIM. A B C D E F G H J K L M DIM. N P INCHES MIN. MAX. 0.044 0.044 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.075 typical 0.103 0.024 GRADIENT 10max. 1 2. . . 30 MILLIMETERS MIN. MAX. 1.10 1.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.90 typical 2.6 0.6
Emitter G J
Base
A
P
N H
B L
M E K Collector Emitter D C F
NOTE: 1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
9
Tel (408) 432-1480
Fax (408)) 432-3440

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