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ON Semiconductort One Watt High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -300 -300 -5.0 -500 1.0 8.0 2.5 20 -55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C MPSW92 ON Semiconductor Preferred Device 1 2 3 CASE 29-10, STYLE 1 TO-92 (TO-226AE) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) Collector Cutoff Current (VCB = -200 Vdc, IE = 0) Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -300 -300 -5.0 -- -- -- -- -- -0.25 -0.1 Vdc Vdc Vdc Adc Adc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 2 Publication Order Number: MPSW92/D MPSW92 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -30 mAdc, VCE = -10 Vdc) Collector-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) hFE 25 40 25 VCE(sat) VBE(sat) -- -- -- -- -- -0.5 -0.9 Vdc Vdc -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = -20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT Ccb 50 -- -- 6.0 MHz pF http://onsemi.com 2 MPSW92 300 250 hFE , DC CURRENT GAIN 200 150 100 50 0 -55C TJ = +125C VCE = 10 Vdc 25C 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1. DC Current Gain Cib @ 1MHz BANDWIDTH (MHz) f T, CURRENT-GAIN 100 150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25C VCE = 20 Vdc F = 20 MHz 17 19 21 C, CAPACITANCE (pF) 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Current-Gain -- Bandwidth VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V Figure 4. "ON" Voltages http://onsemi.com 3 MPSW92 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- R P F L B SEATING PLANE K XX G H R 123 D J SECTION X-X NC N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. 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