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| SI4992EY New Product Vishay Siliconix Dual N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) () 0.048 @ VGS = 10 V 0.062 @ VGS = 4.5 V ID (A) 4.8 4.2 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D High-Efficiency PWM Optimized APPLICATIONS D Automotive Such As: -- High-Side Switch -- Motor Drives -- 42-V Battery D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: SI4992EY--E3 SI4992EY-T1--E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Continuous Source Currenta Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle 1%) Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH 01 TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 10 secs 75 20 4.8 Steady State Unit V 3.6 2.8 1.1 20 8 3.2 mJ 1.4 0.8 --55 to 175 W _C A ID IS IDM IAS EAS 3.7 2 2.4 PD TJ, Tstg 1.4 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73082 S-41640--Rev. A, 06-Sep-04 www.vishay.com t 10 sec Steady State Steady State RthJA RthJF Symbol Typical 50 85 31 Maximum 62.5 110 37 Unit _C/W C/ 1 SI4992EY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 75 V, VGS = 0 V VDS = 75 V, VGS = 0 V, TJ = 85_C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 4.8 A VGS = 4.5 V, ID = 4.2 A VDS = 15 V, ID = 4.8 A IS = 2.4 A, VGS = 0 V 20 0.039 0.050 16 0.8 1.2 0.048 0.062 S V 1 3 100 1 20 mA A V nA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.4 A, di/dt = 100 A/ms VDD = 38 V, RL = 38 ID 1 A, VGEN = 10 V, Rg = 6 f = 1 MHz VDS = 38 V, VGS = 10 V, ID = 4.8 A 14 2.4 3.5 3.6 7 10 22 10 25 15 15 35 15 50 ns 21 nC Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 16 I D -- Drain Current (A) I D -- Drain Current (A) 4V 16 20 Transfer Characteristics 12 12 8 8 TC = 150_C 4 4 3V 0 0 1 2 3 4 5 25_C --55_C 0 0 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 73082 S-41640--Rev. A, 06-Sep-04 www.vishay.com 2 SI4992EY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.08 r DS(on) -- On-Resistance ( ) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 4 8 12 16 20 VGS = 4.5 V VGS = 10 V C -- Capacitance (pF) 900 800 700 Ciss 600 500 400 300 200 100 0 0.0 Crss Coss Vishay Siliconix Capacitance 12.5 25.0 37.5 50.0 62.5 75.0 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 10 V GS -- Gate-to-Source Voltage (V) VDS = 50 V ID = 4.8 A 8 rDS(on) -- On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0 0 3 6 9 12 15 Qg -- Total Gate Charge (nC) 0.6 --50 2.2 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.8 A 6 4 2 --25 0 25 50 75 100 125 150 175 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S -- Source Current (A) TJ = 175_C 10 r DS(on) -- On-Resistance ( ) 0.08 ID = 4.8 A 0.06 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 73082 S-41640--Rev. A, 06-Sep-04 www.vishay.com 3 SI4992EY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) --0.0 --0.2 --0.4 --0.6 10 --0.8 --1.0 --50 0 0.001 ID = 250 mA 40 Power (W) 50 60 50 Single Pulse Power 30 20 --25 0 25 50 75 100 125 150 175 0.01 0.1 1 Time (sec) 10 100 600 TJ -- Temperature (_C) Safe Operating Area 100 rDS(on) Limited 10 I D -- Drain Current (A) IDM Limited P(t) = 0.0001 1 ID(on) Limited TA = 25_C Single Pulse P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 100 0.1 0.01 0.1 1 BVDSS Limited 10 VDS -- Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 85_C/W Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 73082 S-41640--Rev. A, 06-Sep-04 SI4992EY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73082 S-41640--Rev. A, 06-Sep-04 www.vishay.com 5 |
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