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| Si7476DP New Product Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A) 25 23 rDS(on) (W) 0.0053 @ VGS = 10 V 0.0066 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Automotive* - 12-V Boardnet - High-Side Switches - Motor Drives PowerPAK SO-8 *Contact factory for automotive qualification 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7476DP-T1--E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 40 "20 25 20 80 4.5 60 180 5.4 3.4 Steady State Unit V 15 12 A 1.6 mJ 1.9 1.2 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72569 S-40577--Rev. B, 29-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit _C/W C/W 1 Si7476DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 23 A VDS = 15 V, ID = 25 A IS = 4.5 A, VGS = 0 V 40 0.0042 0.0053 85 0.76 1.2 0.0053 0.0066 1.0 3 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.5 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W VDS = 20 V, VGS = 10 V, ID = 25 A 118 25 21.2 1.0 30 22 130 55 45 45 35 195 85 70 ns W 177 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 50 40 30 20 10 0 0.0 VGS = 10 thru 4 V 60 50 40 30 20 10 0 0.0 Transfer Characteristics I D - Drain Current (A) I D - Drain Current (A) TC = 125_C 25_C -55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3V 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72569 S-40577--Rev. B, 29-Mar-04 2 Si7476DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.008 0.007 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.006 0.005 0.004 0.003 0.002 0.001 0.000 0 10 20 30 40 50 60 0 0 Crss 5 10 15 20 25 30 35 40 VGS = 4.5 V VGS = 10 V 8000 Ciss Vishay Siliconix On-Resistance vs. Drain Current 10000 Capacitance 6000 4000 2000 Coss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 20 V ID = 25 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 25 A 8 1.4 rDS(on) - On-Resiistance (Normalized) 6 1.2 4 1.0 2 0.8 0 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.020 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.016 ID = 25 A 0.012 I S - Source Current (A) TJ = 150_C 10 0.008 TJ = 25_C 0.004 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72569 S-40577--Rev. B, 29-Mar-04 www.vishay.com 3 Si7476DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 -0.0 Power (W) -0.2 -0.4 -0.6 -0.8 -1.0 -50 20 60 ID = 250 mA 80 V GS(th) Variance (V) 100 Single Pulse Power, Juncion-to-Ambient 40 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 rDS(on) Limited 10 I D - Drain Current (A) ID(on) Limited Safe Operating Area IDM Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72569 S-40577--Rev. B, 29-Mar-04 Si7476DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72569 S-40577--Rev. B, 29-Mar-04 www.vishay.com 5 |
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