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U30GWJ2C53C
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
U30GWJ2C53C
Switching Mode Power Supply Application Converter&Chopper Application
* * * Repetitive peak reverse voltage: VRRM = 40 V Average output recified current: IO = 30 A Power surface mount device for thin flat package. "TFP" (Toshiba package name) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Repetitive peak reverse voltage Repetitive peak reverse surge voltage (Note1) Average output recified current Peak one cycle surge forward current (non-repetitive, sine wave) Junction temperature Storage temperature range Symbol VRRM VRRSM IO IFSM Tj Tstg Rating 40 48 30 300 (50 Hz) 330 (60 Hz) -40 to 125 -40 to 150 Unit V V A A C C
JEDEC JEITA TOSHIBA
12-9B1A
< Note1: Pulse width (tw) = 500 ns, duty (tw/T) < 1/25 =
Weight: 0.74 g (typ.)
Polarity
K
*A1
A2
*: Common Terminal
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to other rectifier products. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design.
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U30GWJ2C53C
Electrical Characteristics (Ta = 25C)
Characteristics Peak forward voltage Repetitive peak reverse current Junction Capacitance Thermal resistance Symbol VFM IRRM Cj Rth (j-c) Test Condition IFM = 15 A VRRM = 40 V VR = 10 V, f = 1.0 MHz DC Total, Junction to Case Min 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 660 3/4 Max 0.55 15 3/4 1.2 Unit V mA pF C/W
Note2: VFM, IRRM, Cj: A value of one cell.
Marking
1 2 1 2 3 3 C Lot Number Month (starting from alphabet A) Year (last number of the christian era) MARK 30GWJ2C TYPE U30GWJ2C53C
Standard Soldering Pad
8.0 unit: mm
2.5
2.0
3.2
3.8
2.0
2.0
6.0
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U30GWJ2C53C
iF - vF
100 One cell 24
PF (AV) - Io
sin 20 90 16 60 a = 30 120 180
(A)
Tj = 150C
Instantaneous forward current
10 100C 75C
Average forward power dissipation PF (AV) (W)
iF
12
25C 1
Rectangular waveform (one cell)
8
4
0 a 360 Conduction angle a
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 0
4
8
12
16
20
24
28
32
36
Instantaneous forward voltage
vF
(V)
Average output rectified current
Io
(A)
Tc max - Io
140 500
Surge forward current (non-repetitive)
One cell Single phase full Sine wave Ta = 25C
Maximum allowable case temperature Tc max (C)
120 180 a = 30 80 60 40 0 a 360 20 0 0 Conduction angle a 4 8 12 16 20 24 28 32 36 Rectangular waveform (one cell) 60 90 120 sin
(A) Peak surge forward current IFSM
400 300
100
200
60 Hz 50 Hz
100
0 1
10
100
Average output rectified current
Io
(A)
Number of cycles
rth (j-c) - t
10 One cell 10000
Cj - VR
(typical)
f = 1 MHz Ta = 25C
(V)
Transient thermal impedance rth (j-c) (C/W)
One cell
Junction capacitance
0.01 0.1 1 10
Cj
1 1000 0.1 0.001 100 1
100
1000
10
100
Time t (s)
Reverse voltage VR (V)
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U30GWJ2C53C
I R - Tj
1000 Pulse measurement 100 (one cell)
(typical)
3.0 Rectangular waveform 0 2.0 V R 360
PR (AV) - VR
(typical)
Average reverse power dissipation PR (AV) (W)
(mA)
DC 300 Conduction angle a Tj = 150C 1.0 120 60 180 240
Reverse current IR
10 40 1 20 VR = 10 V 0.1 30
0.01 0
25
50
75
100
125
150
0.0 0
10
20
30
40
Junction temperature Tj
(C)
Reverse voltage VR
(V)
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U30GWJ2C53C
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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