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| Wisdom Semiconductor WFF740 N-Channel MOSFET Features RDS(on) (Max 0.55 )@VGS=10V Gate Charge (Typical 38nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C) Symbol 2. Drain 1. Gate 3. Source General Description This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage (* Drain current limited by junction temperature) Parameter Continuous Drain Current(@TC = 25C) Continuous Drain Current(@TC = 100C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Value 400 10* 6.3* 40* Units V A A A V mJ mJ V/ns W W/C C C 25 450 13.4 5.5 44 0.35 - 55 ~ 150 300 Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Min. - Typ. - Max. 2.86 62.5 Units C/W C/W Electrical Characteristics Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 400 ------0.50 ------1 10 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.0 A VDS = 40 V, ID = 5.0 A (Note 4) 2.0 --- -0.44 9.0 4.0 0.55 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1570 150 15 2040 195 20 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 10.0A, VGS = 10 V (Note 4, 5) VDD = 200V, ID = 10.0 A, RG = 25 (Note 4, 5) -------- 25 75 115 70 38 8 13 60 160 240 150 50 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 10.0 A, dIF / dt = 100 A/s (Note 4) ------ ---225 1.59 10 40 1.5 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 7.9mH, IAS = 10.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature Typical Characteristics 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 1 150 C 25 C -55 C Notes : 1. VDS = 40V 2. 250s Pulse Test o o o 10 0 10 0 Notes : 1. 250s Pulse Test 2. TC = 25 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.4 RDS(ON) [ ], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 2.0 VGS = 10V 1.6 10 1 VGS = 20V 1.2 0.8 10 0 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 0.4 Note : TJ = 25 0.0 0 5 10 15 20 25 30 35 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VGS, Gate-Source Voltage [V] 10 VDS = 80V VDS = 200V 2000 Capacitance [pF] Ciss 1500 8 VDS = 320V 6 1000 Coss Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 4 500 2 Note : ID = 10 A 0 -1 10 0 10 0 10 1 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics (Continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 Notes : 1. VGS = 10 V 2. ID = 5.0 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 10 2 Operation in This Area is Limited by R DS(on) 8 ID, Drain Current [A] 100 s 10 1 1 ms 10 ms DC ID, Drain Current [A] 10 s 6 4 10 0 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 2 10 -1 10 0 10 1 10 2 10 3 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 Z JC(t), Thermal Response D = 0 .5 0 .2 10 -1 N o te s : 1 . Z J C (t) = 0 .9 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve Gate Charge Test Circuit & Waveform 5K 0 1V 2 20F 0n 30F 0n Sm Tp a e ye a DT sU VS D VS G 1V 0 Q g s Q g VS G Q g d DT U 3A m Cag hr e Resistive Switching Test Circuit & Waveforms V D S R G V G S R L V D D V D S 9 0 % 1 0 V D U T V G S 1 0 % t(n d) o t r tn o t(f) df o tf o f t f Unclamped Inductive Switching Test Circuit & Waveforms L V D S I D R G 1 0 V tp BS VS D 1 -- I 2 ---------E =-- L S ---------A S A 2 B S -V VS D D D BS VS D IS A V D D I () t D V D D tp D U T V () Dt S Te i m Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS * d v /d t c o n tr o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v /d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p Package Dimensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 15.87 0.20 |
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