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| Super323TM SOT323 NPN SILICON POWER TM (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * LCD backlighting inverter circuits * Boost functions in DC-DC converters ZUMT619 DEVICE TYPE ZUMT619 COMPLEMENT ZUMT720 PARTMARKING T63 RCE(sat) 160m at 1A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb =25C SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE 50 50 5 2 1.0 200 385 500 -55 to +150 UNIT V V V A A mA mW Operating and Storage Temperature Tj:Tstg Range C Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT619 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 24 60 120 160 940 850 200 300 200 75 20 420 450 350 130 60 215 615 150 425 MHz pF ns ns MIN. 50 50 5 10 10 10 35 80 200 270 1100 1100 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC= 100A IC= 10mA* IE= 100A VCB= 40V VEB= 4V VCES= 40V IC= 100mA, IB= 10mA* IC= 250mA, IB= 10mA* IC= 500mA, IB= 10mA* IC= 1A, IB= 50mA* IC= 1A, IB= 50mA* IC= 1A, VCE= 2V* IC=10mA, VCE= 2V* IC= 100mA, VCE=2 V* IC= 500mA, VCE=2V* IC= 1A, VCE= 2V* IC= 1.5A, VCE=2 V* IC= 50mA, VCE=10V f= 100MHz VCB= 10V, f=1MHz VCC=10 V, IC= 1A IB1=IB2=100mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZUMT619 TYPICAL CHARACTERISTICS 0.4 +25C 0.4 IC/IB=50 0.3 0.3 VCE(sat) - (V) VCE(sat) - (V) IC/IB=10 IC/IB=50 IC/IB=100 0.2 0.2 -55C +25C +100C +150C 0.1 0.1 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 800 VCE=2V 1.0 0.8 IC/IB=50 hFE - Typical Gain +100C VBE(sat) - (V) 600 0.6 0.4 0.2 0 400 +25C -55C 200 -55C +25C +100C +150C 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.15 10 0.9 IC - Collector Current (A) VBE(on) - (V) 1 0.6 -55C +25C +100C +150C 100m 0.3 DC 1s 100ms 10ms 1ms 100s 0 1m 10m 100m 1 10 10m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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