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| Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA1318 FEATURES Power dissipation 1. EMITTER TRANSISTOR (PNP) TO-92 PCM : 0.5 W (Tamb=25) 2. COLLECTOR Collector current : -0.2 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55 to +150 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10A, IE=0 Ic=-1mA, IB=0 IE=-10A, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-1mA VCE=-6V, IC=-0.1mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-10mA VCB=-6V, IE=0, f=1MHz -60 -50 -6 -0.1 -0.1 100 70 -0.3 -1 200 4.5 560 A A V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking R 100-200 S 140-280 T 200-400 U 280-560 |
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