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TPCF8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8201
Notebook PC Applications Portable Equipment Applications
* * * * Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 12 3 12 1.35 1.12 W 0.53 0.33 1.46 1.5 0.11 150 -55~150 mJ A mJ C C 1 2 3 4 Unit V V V A
Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 4) Single-device operation (Note 3a)
JEDEC JEITA TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
8 7 6 5
Note: For Notes 1 to 6, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
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TPCF8201
Thermal Characteristics
Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 C/W 111.6 235.8 C/W 378.8 Unit
Marking (Note 5)
Lot code (month) Lot No.
Part No. (or abbreviation code)
F4A
Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Pin #1
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a)
25.4
(b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
25.4
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 16 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 1.5 A Note 5: Repetitive rating: Pulse width limited by maximum channel temperature Note 6: "" on the lower left of the marking indicates Pin 1.
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TPCF8201
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd |Yfs| Ciss Crss Coss tr ton VGS 5V 0V 4.7 ID = 1.5 A RL = 0.67 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 A VGS = 2.0 V, ID = 1.5 A VGS = 2.5 V, ID = 1.5 A VGS = 4.5 V, ID = 1.5 A VDS = 10 V, ID = 1.5 A Min 20 8 0.5 2.7 Typ. 62 50 38 5.4 590 70 85 3.0 7.5 4.4 26 7.5 1.3 2.1 Max 10 10 1.2 100 66 49 ns nC pF S m Unit A A V V
VDD 10 V - Duty < 1%, tw = 10 s =
VDD 16 V, VGS = 5 V, - ID = 3.0 A
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 3.0 A, VGS = 0 V Min Typ. Max 12 -1.2 Unit A V
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TPCF8201
ID - VDS
5 10 6 4 4 5 2 1.9 Common source
Ta = 25C
ID - VDS
10 10 3 2.1 8 1.8 Common source Ta = 25C Pulse test 2 6 1.9 4 1.8 1.7 2 1.6 1.5 VGS = 1.4V 1 0 0 1 2 3 4 5
Pulse test
(A)
ID
3
1.7
Drain current
2
1.6
1
1.5 VGS = 1.4 V
0 0
0.2
0.4
0.6
0.8
Drain-source voltage
VDS
(V)
Drain current ID
(A)
Drain-source voltage
VDS
(V)
ID - VGS
10 Common source 8 VDS = 10 V Pulse test 6 1
VDS - VGS
Common source
(V)
Ta = 25 0.8 Pulse test
ID (A)
VDS Drain-source voltage
0.6 0.4
Drain current
4
2
100
Ta = -55C 25
0.2 0.75
1.5
ID = 3 A
0 0
1
2
3
4
5
0 0
2
4
6
8
10
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
100 Common source VDS = 10 V 1000 Common source Ta = 25C
RDS (ON) - ID
Forward transfer admittance Yfs (S)
Drain-source ON resistance RDS (ON) (m)
Pulse test
Pulse test 100 2.0
Ta = -55C 10 25 100
2.5 10
VGS = 4.5V
1 0.1
1
10
1 0.1
1
10
Drain current ID (A)
Drain current ID (A)
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TPCF8201
RDS (ON) - Ta
120 Common source Pulse test ID = 1.5A,0.75A ID = 3A 60 VGS = 2.5 V ID = 3A,1.5A,0.75A VGS = 4.5 V ID = 3A,1.5A,0.75A 10 10 VGS = 2.0 V 5 3 2.5
IDR - VDS
2.0
Drain-source ON resistance RDS (ON) (m )
100
80
Drain reverse current IDR (A)
VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test 0.1 0
40
20
0 -80
-40
0
40
80
120
160
-0.4
-0.8
-1.2
Ambient temperature Ta (C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
1000 1.2
Vth - Ta
Ciss
1
(pF)
Gate threshold voltage Vth (V)
0.8
Capacitance C
100
Coss
0.6
Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 3 5
Crss
0.4
Common source VDS = 10 V ID = 200A Pulse test
0.2
10
30 50
100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Ambient temperature Ta (C)
PD - Ta
2 t=5s 1.6
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a)
Dynamic input / output characteristics
20 6 16 VDS 8 12 VGS 8 Common source 4 ID = 3 A Ta = 25C Pulse test 0 0 0 10 2 VDD = 16 V 4 4
Device mounted on a glass-epoxy board (b) (Note 2b)
Drain power dissipation PD (W)
(4) Single-device value at dual operation (Note 3b)
0.8 (3) 0.4 (4)
0 0
Drain-source voltage
40
80
120
160
2
4
6
8
Ambient temperature Ta (C)
Total gate charge Qg (nC)
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Gate-source voltage
1.2
(2)
VDS
(1)
(3) Single-device operation (Note 3a)
VGS (V)
(V)
(2) Single-device value at dual operation (Note 3b)
TPCF8201
rth - tw
1000 (4) (3) (2)
Transient thermal impedance rth (C/W)
100
(1)
10
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
1 1m
10 m
100 m
1
10
100
1000
Pulse width
tw (s)
Safe operating Area
100
(A)
ID max (pulse)* 10 1 ms* 10 ms*
Drain current ID
1
*: Single pulse Ta=25 Curves must be derated linearly with increase in temperature.
0.1 0.1
VDSS max 10 100
1
Drain-source voltage
VDS (V)
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TPCF8201
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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TPCF8201(TE85L,F,M TPCF8201(TE85LFMTR-ND	Toshiba America Electronic Components	MOSFET 2N-CH 20V 3A VS-8		0
TPCF8201(TE85L,F,M TPCF8201(TE85LFMCT-ND	Toshiba America Electronic Components	MOSFET 2N-CH 20V 3A VS-8		0
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TPCF8201(TE85L,F) 77680394	Toshiba America Electronic Components	Trans MOSFET N-CH Si 20V 3A 8-Pin VS T/R	4000: USD0.5812	4000

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