View HMC618LP3_4171863.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 0.75 dB Gain: 19 dB OIP3: 36 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3mm SMT Package: 9 mm2
5
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC618LP3(E) is ideal for: * Cellular/3G and LTE/WiMAX/4G * BTS & Infrastructure * Repeaters and Femto Cells * Public Safety Radios
Functional Diagram
General Description
The HMC618LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3(E) shares the same package and pinout with the HMC617LP3(E) 0.55 - 1.2 GHz LNA. The HMC618LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3(E) is an ideal replacement for the HMC375LP3(E).
Electrical Specifi cations, TA = +25 C, Rbias = 10K
Vdd = 3 Vdc Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 12 15 Typ. 1700 - 2000 18 0.009 0.90 17 13 15 16 28 47 65 13.5 1.2 12.5 Max. Min. Typ. 2000 - 2200 15.8 0.009 0.9 19 11 15 16 28 47 65 16.5 1.2 16 Max. Min. Typ. 1700 - 2000 19 0.008 0.75 18 12.5 20 20.5 35 117 155 18 1.1 13.5 Max. Min. Typ. Max. MHz dB dB/C 1.15 dB dB dB dBm dBm dBm 155 mA 2000 - 2200 17 0.008 0.85 19.5 9.5 20 21 36 117 Vdd = 5 Vdc Units
* Rbias resistor sets current, see application circuit herein
5 - 256
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Broadband Gain & Return Loss [1] [2]
25
S21
Gain vs. Temperature [1]
24 22 20
5
LOW NOISE AMPLIFIERS - SMT
5 - 257
15 RESPONSE (dB)
5
S22
Vdd=5V Vdd=3V
GAIN (dB)
18 16
+25C +85C - 40C
-5
-15
S11
14 12
-25 0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
1.6
1.7
1.8
FREQUENCY (GHz)
1.9 2 2.1 FREQUENCY (GHz)
2.2
2.3
Gain vs. Temperature [2]
22 20 18 GAIN (dB) 16 14 12 10 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3
+25C +85C - 40C
Input Return Loss vs. Temperature [1]
0
-5 RETURN LOSS (dB)
+25 C +85 C - 40 C
-10
-15
-20
-25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3
Output Return Loss vs. Temperature [1]
0
+25 C +85 C - 40 C
Reverse Isolation vs. Temperature [1]
0 -5 -10 ISOLATION (dB) -15 -20 -25 -30
+25 C +85 C - 40 C
-5 RETURN LOSS (dB)
-10
-15
-20 -35 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -40 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3
[1] Vdd = 5V, Rbias = 10K
[2] Vdd = 3V, Rbias = 10K
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
5
LOW NOISE AMPLIFIERS - SMT
Noise Figure vs Temperature [1] [2] [4]
1.6 1.4 NOISE FIGURE (dB) 1.2
+85C Vdd=5V Vdd=3V
Output P1dB vs. Temperature [1] [2]
24 22 20 P1dB (dBm) 18 16 14 12 10
+25 C +85 C - 40 C Vdd=3V Vdd=5V
1 0.8
+25 C
0.6 0.4 0.2 0 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3
-40C
1.6
1.7
1.8
1.9 2 2.1 FREQUENCY (GHz)
2.2
2.3
Psat vs. Temperature [1] [2]
24 22
Vdd=5V
Output IP3 vs. Temperature [1] [2]
40 38 36 IP3 (dBm) 34 32 30 28 26 24
Vdd=3V +25 C +85 C - 40 C Vdd=5V
20 Psat (dBm) 18
Vdd=3V
16 14 12 10 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3
+25 C +85 C -40 C
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
Output IP3 and Idd vs. Supply Voltage @ 1750 MHz [3]
38 36 34 IP3 (dBm) 32 30 28 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1
Idd IP3
Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [3]
140 120 100 80 60 40 20 0 5.5 IP3 (dBm) Idd (mA) 38 36 34 32 30 28 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1
IP3
140 120 100 80
Idd
Idd (mA)
60 40 20 0 5.5
VOLTAGE SUPPLY (V)
VOLTAGE SUPPLY (V)
[1] Vdd = 5V, Rbias = 10K [2] Vdd = 3V, Rbias = 10K [3] Rbias = 10K [4] Measurement reference plane shown on evaluation PCB drawing.
5 - 258
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Power Compression @ 1750 MHz [1]
30 Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 1750 MHz [2]
30 Pout (dBm), GAIN (dB), PAE (%)
5
LOW NOISE AMPLIFIERS - SMT
NOISE FIGURE (dB)
20
20
10
10
0
Pout Gain PAE
0
Pout Gain PAE
-10
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
-10
-18 -16 -14 -12 -10 -8 -6 -4 -2
INPUT POWER (dBm)
INPUT POWER (dBm)
Power Compression @ 2100 MHz [1]
30 Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 2100 MHz [2]
30 Pout (dBm), GAIN (dB), PAE (%)
20
20
10
10
0
Pout Gain PAE
0
Pout Gain PAE
-10
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
-10
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4
INPUT POWER (dBm)
INPUT POWER (dBm)
Gain, Power & Noise Figure vs. Supply Voltage @ 1750 GHz [3]
24 22 GAIN (dB) & P1dB (dBm) 20 18 16 14 12 2.7
GAIN P1dB
Gain, Power & Noise Figure vs. Supply Voltage @ 2100 GHz [3]
1.2 1 0.8 0.6 0.4 0.2 0 5.5 GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) 24 22 20 18 16 14 12 2.7
GAIN P1dB Noise Figure
1.2 1 0.8 0.6 0.4 0.2 0 5.5
Noise Figure
3.1
3.5
3.9
4.3
4.7
5.1
3.1
3.5
3.9
4.3
4.7
5.1
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
[1] Vdd = 5V, Rbias = 10K
[2] Vdd = 3V, Rbias = 10K
[3] Rbias = 10K
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 259
HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
5
LOW NOISE AMPLIFIERS - SMT
Output IP3 vs. Rbias @ 1750 MHz
36 34 32 IP3 (dBm) 30 28 26 24 22 100 1000 Rbias (Ohms) 10000
Vdd=5V Vdd=3V
Gain, Noise Figure & Rbias @ 1750 MHz
22 21 20 GAIN (dB) 19 18 17 16 15 14 100 1000 Rbias(Ohms)
Vdd=5V Vdd=3V
1.6 1.4 1.2 NOISE FIGURE (dB) 1 0.8 0.6 0.4 0.2 0 10000
Output IP3 vs. Rbias @ 2100 MHz
38 36 34
Gain, Noise Figure & Rbias @ 2100 MHz
20 19 18 1.2 1 NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 1000 Rbias(Ohms) 10000
IP3 (dBm)
32 30 28 26 24 100 1000
Vdd=5V Vdd=3V
GAIN (dB)
17 16 15 14
Vdd=5V Vdd=3V
10000
100
Rbias (Ohms)
5 - 260
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd
Rbias Vdd1 = Vdd2 (V) Min (Ohms) Max (Ohms) R1 (Ohms) 1k 3V 1K [1] Open Circuit 1.5k 10k 120 5V 0 Open Circuit 470 10k 28 34 47 71 89 117 Idd1 + Idd2 (mA)
5
LOW NOISE AMPLIFIERS - SMT
5 - 261
[1] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2) RF Input Power (RFIN) (Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 9.68 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +6V +10 dBm 150 C 0.63 W 103.4 C/W -65 to +150 C -40 to +85 C
Typical Supply Current vs. Vdd (Rbias = 10K)
Vdd (Vdc) 2.7 3.0 3.3 4.5 5.0 5.5 Idd (mA) 35 47 58 101 117 133
Note: Amplifi er will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
5
LOW NOISE AMPLIFIERS - SMT
Outline Drawing
Part Number HMC618LP3 HMC618LP3E
Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish Sn/Pb Solder 100% matte Sn
MSL Rating MSL1 MSL1
[1]
Package Marking [3] 618 XXXX 618 XXXX
[2]
[1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX
5 - 262
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Pin Descriptions
Pin Number 1, 3 - 5, 7, 9, 12, 14, 16 Function N/C Description No connection required. These pins may be connected to RF/ DC ground without affecting performance. Interface Schematic
5
This pin is DC coupled and matched to 50 Ohms.
2
RFIN
6, 10
GND
This pin and ground paddle must be connected to RC/DC ground.
8
RES
This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit.
11
RFOUT
This pin is matched to 50 Ohms.
13, 15
Vdd2, Vdd1
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 F are required.
Application Circuit
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 263
LOW NOISE AMPLIFIERS - SMT
HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
5
LOW NOISE AMPLIFIERS - SMT
Evaluation PCB
List of Material for Evaluation PCB 117905 [1]
Item J1, J2 J3 - J5 C2, C4 C3, C5 L1 L3 C6 C1 R1 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 1000 pF Capacitor, 0603 pkg. 0.47 F Capacitor, Tantalum 15nH, Inductor, 0603 pkg 6.8nH, Inductor, 0603 pkg 220pF Capacitor, 0402 pkg 10nF Capacitor, 0402 pkg 10k Ohm resistor, 0402 pkg HMC618LP3(E) Amplifier 120586 Evaluation PCB
The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350.
5 - 264
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Notes:
5
LOW NOISE AMPLIFIERS - SMT
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 265

▲Up To Search▲

Price & Availability of HMC618LP3

	To Download HMC618LP3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .