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Freescale Semiconductor Technical Data
Document Number: MHL19338NN Rev. 0, 12/2006
Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 46 dBm Typ * Power Gain: 30 dB Typ (@ f = 1960 MHz) * Input VSWR v 1.5:1 Features * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * RoHS Compliant
MHL19338NN
1900- 2000 MHz 4.0 W, 30 dB RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25C unless otherwise noted)
Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +10 - 40 to +100 - 20 to +100 Unit Vdc dBm C C
Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25C; 50 System)
Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Compression (f = 1960 MHz) (f = 1900 - 2000 MHz) (f = 1950 MHz) Symbol IDD Gp GF P1dB ITO NF Min -- 29 -- 35 45 -- Typ 500 30 0.1 36 46 4.2 Max 525 32 0.4 -- -- 4.5 Unit mA dB dB dBm dBm dB
Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) Noise Figure (f = 2000 MHz)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MHL19338NN 1
RF Device Data Freescale Semiconductor
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
PCS Band RF Linear LDMOS Amplifier
LIFETIME BUY
PACKAGE DIMENSIONS
A G 0.020 (0.51)
M
A S
2X
Q 0.008 (0.20)
M
TS
M
A
M
TA
M
B
R J K W
4X 1 2 3 4
S
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC RF INPUT VDD1 VDD2 RF OUTPUT GROUND MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC
D
M
0.020 (0.51)
M
TB
N L H F E C T
SEATING PLANE
4X
P 0.020 (0.51)
M
T
STYLE 1: PIN 1. 2. 3. 4. CASE:
CASE 301AP - 02 ISSUE E
MHL19338NN 2 RF Device Data Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Dec. 2006 * Initial Release of Data Sheet Description
MHL19338NN RF Device Data Freescale Semiconductor 3
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MHL19338NN 4Rev. 0, 12/2006
Document Number: MHL19338NN
RF Device Data Freescale Semiconductor

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