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H5N2503P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005
Features
* * * * * Low on-resistance: R DS (on) = 0.04 typ. Low leakage current: IDSS = 1 A max (at VDS = 250 V) High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A) Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
H5N2503P
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 250 30 50 200 50 200 50 150 0.833 150 -55 to +150
Unit V V A A A A A W C/W C C
IDR (pulse) Note 3 IAP Pch ch-c Tch Tstg
Note 1
Note 2
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 250 -- -- 3.0 -- 25 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.040 40 5150 620 105 58 210 220 190 140 25 60 1.0 210 1.8 Max -- 0.1 1 4.0 0.055 -- -- -- -- -- -- -- -- -- -- -- 1.5 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test Conditions ID = 10 mA, VGS = 0 VGS = 30 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA Note 4 ID = 25 A, VGS = 10 V ID = 25 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz ID = 25 A VGS = 10 V RL = 5 Rg = 10 VDD = 200 V VGS = 10 V ID = 50 A IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 diF/dt = 100 A/s
Note 4
Rev.2.00 Sep 07, 2005 page 2 of 6
H5N2503P
Main Characteristics
Power vs. Temperature Derating
200 1000 300
Maximum Safe Operation Area
Pch (W)
150
100 30 10 3
PW
Channel Dissipation
DC
=
Drain Current
100
Op
10
10 0 s 1m s s 10
ID (A)
er
m
at
ion
s(
1s
(T c=
ho
t)
50
0
0
50
100
150
200
Operation in 1 this area is limited by RDS(on) 0.3 Ta = 25C 0.1 1 3 10 30
25
C )
100
300
1000
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
100 10 V 8V Pulse Test 100
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
80
ID (A) Drain Current
7V 6.5 V
6V
80
60
60 5.5 V
Drain Current
40
40 25C 20 Tc = 75C -25C
20
5V VGS = 4.5 V
0 0 4 8 12 16 20
0 0 2 4 6 8 10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Pulse Test 4
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) (m)
Drain to Source Saturation Voltage VDS(on) (V)
5
200 Pulse Test 100
3 ID = 50 A
50
VGS = 10 V, 15 V
2
1
25 A 10 A
20
0 0 4 8 12 16 20
10 1
2
5
10
20
50
100
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
H5N2503P
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
200 100 50 20 10 5 2 1 0.5 0.2 0.2 VDS = 10 V Pulse Test 0.5 1 2 5 10 20 50 100 75C 25C Tc = -25C Pulse Test VGS = 10 V
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
160
120 ID = 50 A 80 25 A 40 10 A
0 -40
0
40
80
120
160
Case Temperature
Tc (C)
Drain Current
ID (A)
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000 500 50000 20000
Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz Ciss
Capacitance C (pF)
10000 5000 2000 1000 500 200 100 Crss 0 20 40 60 80 100 Coss
200 100 50
20 10 0.1
di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
50
Reverse Drain Current
IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 50 A VGS VDD = 50 V 100 V 200 V VDS
Switching Characteristics
VGS (V)
20 10000 VGS = 10 V, VDD = 125 V PW = 10 s, duty 1 % RG = 10 1000 td(off) 100 tf td(on) tr 10 0.1 0.3 1 3 10 30 100 tr
500
400
16
Drain to Source Voltage
300
12
200
8
100
0 0 40
VDD = 200 V 100 V 50 V 80 120 160
4
0 200
Gate Charge
Qg (nC)
Gate to Source Voltage
Switching Time t (ns)
Drain Current
ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
H5N2503P
Reverse Drain Current vs. Source to Drain Voltage
100 5
Gate to Source Cutoff Voltage vs. Case Temperature
VDS = 10 V
IDR (A)
80 VGS = 0 V 60
Gate to Source Cutoff Voltage VGS(off) (V)
4 ID = 10 mA 3 1 mA 2 0.1 mA
Reverse Drain Current
40 10 V 20 5V Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0
1
0 -50
0
50
100
150
200
Source to Drain Voltage
VSD (V)
Case Temperature
Tc (C)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
ch - c (t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C PDM
0.05
0.03
D=
PW T
0.02 1 0.0
PW T
1s
0.01 10
t ho
pu
lse
100
1m
10 m
100 m
1
10
Pulse Width
PW (S)
Switching Time Test Circuit
Waveform
Vin Monitor D.U.T. RL 10 Vin 10 V
Vout Monitor Vin Vout VDD = 125 V 10% 10%
90%
10%
90% td(on) tr
90% td(off) tf
Rev.2.00 Sep 07, 2005 page 5 of 6
H5N2503P
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P / TO-3PV
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name Quantity Shipping Container H5N2503P-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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