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| SI3981DV New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.185 @ VGS = -4.5 V -20 0.260 @ VGS = -2.5 V 0.385 @ VGS = -1.8 V FEATURES D TrenchFETr Power MOSFET ID (A) -1.9 -1.6 -0.7 APPLICATIONS D Battery Switch for Portable Devices D Computers - Bus Switch - Load Switch TSOP-6 Top View G1 3 mm 6 5 D1 G1 S1 S2 1 2 S2 S1 G2 G2 3 4 D2 2.85 mm Ordering Information: SI3981DV-T1--E3 Marking Code: MCxxx D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State -20 "8 Unit V -1.9 -1.5 -8 -1.0 1.08 0.69 -55 to 150 -1.6 -1.3 A -0.72 0.80 0.51 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72502 S-40575--Rev. C, 29-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 97 132 78 Maximum 115 155 95 Unit _C/W C/W 1 SI3981DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 85_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1.9 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -1.6 A VGS = -1.8 V, ID = -0.7 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -5 V, ID = -1.9 A IS = -1.0 A, VGS = 0 V -5 0.146 0.210 0.306 4 -0.84 -1.1 0.185 0.260 0.385 S V W -0.40 -1.1 "100 -1 -10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -1.00 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W 10 ID ^ -1 A, VGEN = -4.5 V, Rg = 6 W f = 1 MHz VDS = -10 V, VGS = -4.5 V, ID = -1.9 A 3.2 0.42 0.84 6 30 50 45 21 20 45 85 85 50 40 ns W 5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 7 I D - Drain Current (A) 6 5 4 3 2 1 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 1.5 V 2V VGS = 5 thru 3 V 8 7 I D - Drain Current (A) 6 5 4 3 2 1 0 0.0 Transfer Characteristics TC = -55_C 25_C 125_C 2.5 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Document Number: 72502 S-40575--Rev. C, 29-Mar-04 2 SI3981DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.6 0.5 r DS(on)- On-Resistance ( W ) 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 ID - Drain Current (A) VGS = 1.8 V C - Capacitance (pF) 400 350 300 250 200 150 100 50 Crss 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Coss Ciss Vishay Siliconix Capacitance VGS = 2.5 V VGS = 4.5 V 6 5 4 3 2 1 0 0.0 VDS = 10 V ID = 1.9 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1.9 A V GS - Gate-to-Source Voltage (V) 1.4 rDS(on) - On-Resiistance (Normalized) 1.2 1.0 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) 0.4 ID = 1.9 A I S - Source Current (A) 1 TJ = 150_C 0.3 0.2 TJ = 25_C 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Document Number: 72502 S-40575--Rev. C, 29-Mar-04 0.0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 SI3981DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.3 25 Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) 20 ID = 250 mA Power (W) 0.1 15 0.0 10 -0.1 5 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Case IDM Limited 10 I D - Drain Current (A) rDS(on) Limited 1 ID(on) Limited 0.1 TC = 25_C Single Pulse BVDSS Limited 1 10 1 ms 10 ms 100 ms 10 s, 1 s dc 0.01 0.1 100 VDS - Drain-to-Source Voltage (V) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 132_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72502 S-40575--Rev. C, 29-Mar-04 www.vishay.com 4 SI3981DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72502 S-40575--Rev. C, 29-Mar-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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