View 2SC3583_4276980.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SMD Type
NPN Silicon Epitaxial Transistor 2SC3583
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Features
NF 1.2 dB TYP. @f = 1.0 GHz Ga 13 dB TYP. @f = 1.0 GHz
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Rating 20 10 1.5 65 200 150 -65 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain *1 Gain bandwidth product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure *1.Pulse Measurement PW Symbol ICBO IEBO hFE fT Cre *2 | MAG NF 350is, Duty Cycle 2 % Testconditons VCB = 10 V, IE = 0 VEB = 1 V, IE = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IE = 7 mA, f = 1.0 GHz 11 50 100 9 0.35 13 15 1.2 2.5 0.9 Min Typ Max 1.0 1.0 250 GHz pF dB dB dB Unit iA iA
*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Marking Rank hFE R33 R33/Q 50 100 R34 R34/R 80 160 R35 R35/S 125 250
+0.1 0.38-0.1
0-0.1
www.kexin.com.cn
1

▲Up To Search▲

Price & Availability of 2SC3583

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SC3583-T1B-A 2156-2SC3583-T1B-A-ND	Rochester Electronics LLC	2SC3583 - MD	666: USD0.45	108160
2SC3583-A 2SC3583-A-ND	California Eastern Laboratories (CEL)	RF TRANS NPN 10V 9GHZ SOT23-3		0
2SC3583-T1B-A 2SC3583-T1B-ADKR-ND	California Eastern Laboratories (CEL)	RF TRANS NPN 10V 9GHZ SOT23	1: USD1.3	0
2SC3583-T1B-A 2SC3583-T1B-ATR-ND	California Eastern Laboratories (CEL)	RF TRANS NPN 10V 9GHZ SOT23		0
2SC3583-T1B-A 2SC3583-T1B-ACT-ND	California Eastern Laboratories (CEL)	RF TRANS NPN 10V 9GHZ SOT23		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SC3583-T1B	NEC Electronics Group			2649
2SC3583-T1B	NEC Electronics Group		835: USD0.12 168: USD0.18 26: USD0.3 9: USD0.6	1050
2SC3583-T1B-A	NEC Electronics Group			9000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SC3583-T1B	NEC Electronics Group	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	418: USD0.096 68: USD0.12 1: USD0.18	867
2SC3583-T1B	NEC Electronics Group	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	209: USD0.16 26: USD0.24 1: USD0.8	840
2SC3583-T1B-A	NEC Electronics Group	UHF BAND, SI, NPN, RF SMALL SIGNAL TRANSISTOR	3760: USD0.342 1755: USD0.399 1: USD1.14	7200

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SC3583-T1B-A	Renesas Electronics Corporation	2SC3583 - RF Bipolar NPN Transistor '	1000: USD0.3868 500: USD0.4095 100: USD0.4277 25: USD0.4459 1: USD0.455	108160

	To Download 2SC3583 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .