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| SMD Type Silicon PIN diode BAP64-03 Diodes SOD-323 Unit: mm High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance 0.475 +0.1 2.6-0.1 +0.05 0.3-0.05 Features +0.1 1.7-0.1 +0.05 0.85-0.05 1.0max 0.375 Low series inductance +0.05 0.1-0.02 For applications up to 3 GHz. Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature thermal resistance from junction to soldering point Ts = 90 Symbol VR IF Ptot Tstg Tj Rth j-s -65 -65 Min Max 175 100 500 +150 +150 120 K/W Unit V mA mW Electrical Characteristics Ta = 25 Parameter forward voltage reverse leakage current Symbol VF IR Conditions IF = 50 mA VR = 175 V VR = 20 V VR = 0; f = 1 MHz diode capacitance Cd VR = 1 V; f = 1 MHz VR = 20V; f = 1 MHz IF = 0.5 mA; f = 100 MHz; note 1 diode forward resistance rD IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = 100 mA; f = 100 MHz; note 1 charge carrier life time series inductance Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. when switched from IF = 10 mA to IR = 6 mA; L Min Typ 0.95 Max 1.1 10 1 Unit V V nA 0.48 0.35 0.23 20 10 2 0.7 1.55 1.68 0.5 0.35 40 20 3.8 1.35 ns nH pF RL = 100 LS ;measured at IR = 3 mA Marking Marking A3 +0.1 1.3-0.1 www.kexin.com.cn 1 |
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