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Datasheet File OCR Text:

SMD Type
MOS Fied Effect Transistor 2SJ210
SOT-23
MOSFET
Unit: mm
Features
Directly driven by Ics having a 5V poer supply.
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
its high input impedance. Possible to reduce the number of parts by omitting the biasresistor.
1
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
Not necessary to consider driving current because of
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 20 200 400 200 150 -55 to +150 Unit V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 20V,VDS=0 A -1.4 20 -1.8 45 10 6 27 VDS=-5.0V,VGS=0,f=1MHZ 21 3 120 VGS(on)=-4V,RG=10 10mA RL=500 ,VDD=-5V,ID=190 150 180 15 10 pF pF pF ns ns ns ns Min Typ Max -10 10 -2.4 Unit A A V ms
VGS(off) VDS=-5.0V,ID=-1 Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf
VDS=-5.0V,ID=-10mA VGS=-4.0V,ID=-10mA VGS=-10V,ID=-10mA
Marking
Marking H16
+0.1 0.38-0.1
0-0.1
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Price & Availability of 2SJ210

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SJ210(0)-T1B-AT 2156-2SJ210(0)-T1B-AT-ND	Renesas Electronics Corporation	P-CHANNEL SMALL SIGNAL MOSFET	902: USD0.33	21000
2SJ210(0)-T1B-A 2156-2SJ210(0)-T1B-A-ND	Renesas Electronics Corporation	P-CHANNEL SMALL SIGNAL MOSFET	902: USD0.33	19913

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SJ210(0)-T1B-A	Renesas Electronics Corporation	2SJ210 - Small Signal Field-Effect Transistor, 0.2A, 60V, P-Channel MOSFET '	1000: USD0.2856 500: USD0.3024 100: USD0.3158 25: USD0.3293 1: USD0.336	19913
2SJ210(0)-T1B-AT	Renesas Electronics Corporation	2SJ210 - Small Signal Field-Effect Transistor, 0.2A, 60V, P-Channel MOSFET '	1000: USD0.2856 500: USD0.3024 100: USD0.3158 25: USD0.3293 1: USD0.336	21000
2SJ210-T1B-A	Renesas Electronics Corporation	2SJ210 - Small Signal Field-Effect Transistor, 0.2A, 60V, P-Channel MOSFET '	1000: USD0.2697 500: USD0.2856 100: USD0.2983 25: USD0.311 1: USD0.3173	889
2SJ210-T2B-A	Renesas Electronics Corporation	2SJ210 - Small Signal Field-Effect Transistor, 0.2A, 60V, P-Channel MOSFET '	1000: USD0.2697 500: USD0.2856 100: USD0.2983 25: USD0.311 1: USD0.3173	878

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SJ210	Guangdong Kexin Industrial Co Ltd			10000

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