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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION MJE800/801/802/803 Absolute Maximun Ratings (Ta=25ae ) SYMBOL PARAMETER VCBO VCEO INC Collector-base voltage E SEM ANG H MJE800/801 MJE802/803 MJE800/801 MJE802/803 OND IC CONDITIONS TOR UC VALUE 60 80 60 UNIT Open emitter V Collector-emitter voltage Open base 80 Open collector 5 4 0.1 TC=25ae 40 150 -55~150 ae ae V VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER MJE800/801 IC=50mA;IB=0 MJE802/803 MJE800/802 MJE801/803 IC=1.5A ;IB=30mA IC=2A ;IB=40mA IC=4A ;IB=40mA IC=1.5A ; VCE=3V CONDITIONS MJE800/801/802/803 SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.5 V 2.8 3.0 V VCEsat-1 Collector-emitter saturation voltage VCEsat-2 Collector-emitter saturation voltage MJE800/802 MJE801/803 VBE-1 Base-emitter on voltage Base-emitter on voltage Collector cut-off current 2.5 IC=2A ; VCE=3V IC=4A ; VCE=3V MJE800/801 MJE802/803 VCE=60V; IB=0 VCE=80V; IB=0 3.0 V VBE-2 V ICEO ICBO IEBO IN Collector cut-off current Emitter cut-off current hFE-1 DC current gain ANG CH MJE800/802 MIC E SE VEB=5V; IC=0 IC=1.5A ; VCE=3V IC=2A ; VCE=3V IC=4A ; VCE=3V VCB=Rated BVCEO; IE=0 TC=100ae DUC ON 750 TOR 100 |I 100 500 2 A |I A mA MJE801/803 hFE-2 DC current gain 100 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE800/801/802/803 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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