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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION * Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 *High Power Dissipation APPLICATIONS *Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER TIP562 VCBO Collector-Base Voltage TIP563 TIP562 VCEO(SUS) Collector-Emitter Voltage TIP563 VEBO IC ICM IB B VALUE 300 UNIT V 400 300 V 400 8 10 15 2 100 200 -65~200 V A A A W Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=100 Junction Temperature Storage Temperature PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER TIP562 IC=100mA ; IB=0 TIP563 VCE(sat)-1 VCE(sat)-2 VBE(sat) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage TIP562 TIP563 TIP562 TIP563 IEBO hFE-1 hFE-2 Emitter Cutoff Current DC Current Gain DC Current Gain IC= 10A; IB= 1.66A IC= 15A; IB= 5A IC= 10A; IB= 1.66A VCE= 270V;IB= 0 VCE= 360V;IB= 0 VCB= 300V;IE= 0 VCB= 400V;IE= 0 VEB= 8V; IC=0 IC= 1A ; VCE= 4V IC= 10A ; VCE= 4V 20 8 400 CONDITIONS MIN 300 TIP562/563 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 1.2 2.0 1.4 1.0 V V V ICEO Collector Cutoff Current mA 1.0 0.1 mA 0.1 5.0 mA ICBO Collector Cutoff Current Switching Times td tr tstg tf Delay Time Rise Time VCC= 180V;VBE= -5.2V IC= 10A; IB1= -IB2= 2A Storage Time Fall Time 1.2 0.3 0.05 0.5 s s s s isc Websitewww.iscsemi.cn 2 |
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